P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Jung Hyeon Bae, Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

Abstract

In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

Original languageEnglish
Pages (from-to)1304-1307
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume41 1
Publication statusPublished - 2010 May 1

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Charge trapping
Thin film transistors
Oxide films
Nanoparticles
Data storage equipment
Hysteresis
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.",
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P-22 : Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles. / Bae, Jung Hyeon; Kim, Gun Hee; Jeong, Woong Hee; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 41 1, 01.05.2010, p. 1304-1307.

Research output: Contribution to journalArticle

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