P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Jung Hyeon Bae, Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

Abstract

In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

Original languageEnglish
Pages (from-to)1304-1317
Number of pages14
JournalDigest of Technical Papers - SID International Symposium
Volume41 1
DOIs
Publication statusPublished - 2010 May

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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