P-23: Solution-processed amorphous lanthanum indium zinc oxide thin-film transistors

Doo Na Kim, Dong Lim Kim, Gun Wee Kim, Si Joon Kim, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we introduce a solution-processed amorphous lanthanum indium zinc oxide (LIZO) TFT. From the characteristic variation of LIZO films according to La atomic percentage, it was confirmed that additive La atoms suppress the carrier generation by reducing oxygen vacancies. LIZO TFT was optimized at La 5% and its channel mobility, threshold voltage, s-factor, and on-off ratio were 2.64 cm2/Vs, 7.86 V, 0.6 V/dec, and ∼106, respectively. From these results, as substitution material of gallium in IGZO, lanthanum can be used for one of the candidates of carrier controller in IZO system.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1308-1311
Number of pages4
Publication statusPublished - 2010 Dec 1
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 2010 May 232010 May 28

Publication series

Name48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Volume3

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period10/5/2310/5/28

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Information Systems

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  • Cite this

    Kim, D. N., Kim, D. L., Kim, G. W., Kim, S. J., & Kim, H. J. (2010). P-23: Solution-processed amorphous lanthanum indium zinc oxide thin-film transistors. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (pp. 1308-1311). (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010; Vol. 3).