P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

Sun Jae Kim, Young Wook Lee, Soo Yeon Lee, Jong Suk Woo, Jang-Yeon Kwon, Min Koo Han, Woo Geun Lee, Kap Soo Yoon

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.

Original languageEnglish
Pages (from-to)1195-1197
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
Publication statusPublished - 2011 Jun 1

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Thin film transistors
Threshold voltage
Oxide films
Gallium
Indium

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, Sun Jae ; Lee, Young Wook ; Lee, Soo Yeon ; Woo, Jong Suk ; Kwon, Jang-Yeon ; Han, Min Koo ; Lee, Woo Geun ; Yoon, Kap Soo. / P-28 : The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs. In: Digest of Technical Papers - SID International Symposium. 2011 ; Vol. 42 1. pp. 1195-1197.
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P-28 : The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs. / Kim, Sun Jae; Lee, Young Wook; Lee, Soo Yeon; Woo, Jong Suk; Kwon, Jang-Yeon; Han, Min Koo; Lee, Woo Geun; Yoon, Kap Soo.

In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 01.06.2011, p. 1195-1197.

Research output: Contribution to journalArticle

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AU - Kwon, Jang-Yeon

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AU - Lee, Woo Geun

AU - Yoon, Kap Soo

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