Abstract
We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.
| Original language | English |
|---|---|
| Pages (from-to) | 1195-1197 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 42 1 |
| Publication status | Published - 2011 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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P-28 : The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs. / Kim, Sun Jae; Lee, Young Wook; Lee, Soo Yeon; Woo, Jong Suk; Kwon, Jang-Yeon; Han, Min Koo; Lee, Woo Geun; Yoon, Kap Soo.
In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 01.06.2011, p. 1195-1197.Research output: Contribution to journal › Article
TY - JOUR
T1 - P-28
T2 - The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs
AU - Kim, Sun Jae
AU - Lee, Young Wook
AU - Lee, Soo Yeon
AU - Woo, Jong Suk
AU - Kwon, Jang-Yeon
AU - Han, Min Koo
AU - Lee, Woo Geun
AU - Yoon, Kap Soo
PY - 2011/6/1
Y1 - 2011/6/1
N2 - We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.
AB - We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.
UR - http://www.scopus.com/inward/record.url?scp=84863196735&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863196735&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:84863196735
VL - 42 1
SP - 1195
EP - 1197
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
SN - 0097-966X
ER -