P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

Sun Jae Kim, Young Wook Lee, Soo Yeon Lee, Jong Suk Woo, Jang Yeon Kwon, Min Koo Han, Woo Geun Lee, Kap Soo Yoon

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Abstract

We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.

Original languageEnglish
Pages (from-to)1195-1197
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
Publication statusPublished - 2011 Jun 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, S. J., Lee, Y. W., Lee, S. Y., Woo, J. S., Kwon, J. Y., Han, M. K., Lee, W. G., & Yoon, K. S. (2011). P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs. Digest of Technical Papers - SID International Symposium, 42 1, 1195-1197.