Abstract
We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.
| Original language | English |
|---|---|
| Pages (from-to) | 1195-1197 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 42 1 |
| DOIs | |
| Publication status | Published - 2011 Jun |
All Science Journal Classification (ASJC) codes
- Engineering(all)
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Kim, S. J., Lee, Y. W., Lee, S. Y., Woo, J. S., Kwon, J. Y., Han, M. K., Lee, W. G., & Yoon, K. S. (2011). P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs. Digest of Technical Papers - SID International Symposium, 42 1, 1195-1197. https://doi.org/10.1889/1.3621043