Abstract
We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.
Original language | English |
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Pages (from-to) | 1195-1197 |
Number of pages | 3 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 42 1 |
DOIs | |
Publication status | Published - 2011 Jun |
All Science Journal Classification (ASJC) codes
- Engineering(all)