P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

Sun Jae Kim; Young Wook Lee; Soo Yeon Lee; Jong Suk Woo; Jang Yeon Kwon; Min Koo Han; Woo Geun Lee; Kap Soo Yoon

doi:10.1889/1.3621043

P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

Sun Jae Kim, Young Wook Lee, Soo Yeon Lee, Jong Suk Woo, Jang Yeon Kwon, Min Koo Han, Woo Geun Lee, Kap Soo Yoon

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.

Original language	English
Pages (from-to)	1195-1197
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	42 1
DOIs	https://doi.org/10.1889/1.3621043
Publication status	Published - 2011 Jun

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1889/1.3621043

Fingerprint Dive into the research topics of 'P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs'. Together they form a unique fingerprint.

Cite this

@article{7995b2cb6ba24e6d95223f715040593b,

title = "P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs",

abstract = "We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.",

author = "Kim, {Sun Jae} and Lee, {Young Wook} and Lee, {Soo Yeon} and Woo, {Jong Suk} and Kwon, {Jang Yeon} and Han, {Min Koo} and Lee, {Woo Geun} and Yoon, {Kap Soo}",

year = "2011",

month = jun,

doi = "10.1889/1.3621043",

language = "English",

volume = "42 1",

pages = "1195--1197",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

}

P-28 : The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs. / Kim, Sun Jae; Lee, Young Wook; Lee, Soo Yeon; Woo, Jong Suk; Kwon, Jang Yeon; Han, Min Koo; Lee, Woo Geun; Yoon, Kap Soo.

In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 06.2011, p. 1195-1197.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - P-28

T2 - The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

AU - Kim, Sun Jae

AU - Lee, Young Wook

AU - Lee, Soo Yeon

AU - Woo, Jong Suk

AU - Kwon, Jang Yeon

AU - Han, Min Koo

AU - Lee, Woo Geun

AU - Yoon, Kap Soo

PY - 2011/6

Y1 - 2011/6

N2 - We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.

AB - We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.

UR - http://www.scopus.com/inward/record.url?scp=84863196735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863196735&partnerID=8YFLogxK

U2 - 10.1889/1.3621043

DO - 10.1889/1.3621043

M3 - Article

AN - SCOPUS:84863196735

VL - 42 1

SP - 1195

EP - 1197

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

ER -

P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this