We investigated AC bias stress instability of indium-gallium-zincoxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2011 Jun|
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