P-N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices

Dae Kyoung Kim, Seok Bo Hong, Kwangsik Jeong, Changmin Lee, Hyoungsub Kim, Mann Ho Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This study used a spatially controlled boron-doping technique that enables a p-n junction diode to be realized within a single 2D black phosphorus (BP) nanosheet for high-performance photovoltaic application. The reliability of the BP surface and state-of-the-art 2D p-n heterostructure's gated junctions was obtained using the controllable pulsed-plasma process technique. Chemical and structural analyses of the boron-doped BP were performed using X-ray photoelectron spectroscopy, transmission electron microscopy, and first-principles density functional theory (DFT) calculations, and the electrical characteristics of a field-effect transistor based on the p-n heterostructure were determined. The incorporated boron generated high electron density at the BP surface. The electron mobility of BP was significantly enhanced to ∼265 cm 2 /V·s for the top gating mode, indicating greatly improved electron transport behavior. Ultraviolet photoelectron spectroscopy and DFT characterizations revealed the occurrence of significant surface charge transfer in the BP. Moreover, the pulsed-plasma boron-doped BP p-n junction devices exhibited high-efficiency photodetection behavior (rise time: 1.2 ms and responsivity: 11.3 mA/W at V g = 0 V). This study's findings on the tunable nature of the surface-transfer doping scheme reveal that BP is a promising candidate for optoelectronic devices and advanced complementary logic electronics.

Original languageEnglish
JournalACS Nano
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Plasma diodes
junction diodes
Boron
Phosphorus
phosphorus
boron
p-n junctions
Density functional theory
Heterojunctions
Doping (additives)
photoelectron spectroscopy
Ultraviolet photoelectron spectroscopy
density functional theory
Plasmas
Nanosheets
Electron mobility
ultraviolet spectroscopy
Surface charge
Field effect transistors
optoelectronic devices

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, Dae Kyoung ; Hong, Seok Bo ; Jeong, Kwangsik ; Lee, Changmin ; Kim, Hyoungsub ; Cho, Mann Ho. / P-N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices. In: ACS Nano. 2019.
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abstract = "This study used a spatially controlled boron-doping technique that enables a p-n junction diode to be realized within a single 2D black phosphorus (BP) nanosheet for high-performance photovoltaic application. The reliability of the BP surface and state-of-the-art 2D p-n heterostructure's gated junctions was obtained using the controllable pulsed-plasma process technique. Chemical and structural analyses of the boron-doped BP were performed using X-ray photoelectron spectroscopy, transmission electron microscopy, and first-principles density functional theory (DFT) calculations, and the electrical characteristics of a field-effect transistor based on the p-n heterostructure were determined. The incorporated boron generated high electron density at the BP surface. The electron mobility of BP was significantly enhanced to ∼265 cm 2 /V·s for the top gating mode, indicating greatly improved electron transport behavior. Ultraviolet photoelectron spectroscopy and DFT characterizations revealed the occurrence of significant surface charge transfer in the BP. Moreover, the pulsed-plasma boron-doped BP p-n junction devices exhibited high-efficiency photodetection behavior (rise time: 1.2 ms and responsivity: 11.3 mA/W at V g = 0 V). This study's findings on the tunable nature of the surface-transfer doping scheme reveal that BP is a promising candidate for optoelectronic devices and advanced complementary logic electronics.",
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P-N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices. / Kim, Dae Kyoung; Hong, Seok Bo; Jeong, Kwangsik; Lee, Changmin; Kim, Hyoungsub; Cho, Mann Ho.

In: ACS Nano, 01.01.2019.

Research output: Contribution to journalArticle

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