It is developed that transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In2O3 (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co-sputtering of ACO and ITO targets, the graded p-type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P-type conductivity of the ACO film for acting as effective HIL in QD-LEDs is confirmed by a positive Hall coefficient (1.74 × 10−3 ohm cm3/C) and a positive Seebeck constant (115 µV K−1). Due to the well-matched work function of p-type ACO on the ITO electrodes, the acidic PEDOT:PSS-free QD-LEDs exhibited typical current-voltage-luminescence of QD-LEDs. The successful operation of PEDOT:PSS-free QD-LED with p-type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for cost-effective QD-LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD-LEDs.
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2019 Jun 5|
Bibliographical noteFunding Information:
This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012200). This study also received partial support from a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No. 2018R1A2B2003826).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry