P-type Sb-doped Cu2O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS-Free Quantum Dot Light Emitting Diodes

Hyeong Jin Seo, Ji Eun Lee, Su Been Heo, Minju Kim, Yeonjin Yi, Seong Jun Kang, Han Ki Kim

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It is developed that transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In2O3 (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co-sputtering of ACO and ITO targets, the graded p-type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P-type conductivity of the ACO film for acting as effective HIL in QD-LEDs is confirmed by a positive Hall coefficient (1.74 × 10−3 ohm cm3/C) and a positive Seebeck constant (115 µV K−1). Due to the well-matched work function of p-type ACO on the ITO electrodes, the acidic PEDOT:PSS-free QD-LEDs exhibited typical current-voltage-luminescence of QD-LEDs. The successful operation of PEDOT:PSS-free QD-LED with p-type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for cost-effective QD-LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD-LEDs.

Original languageEnglish
Article number1900004
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number11
Publication statusPublished - 2019 Jun 5


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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