P-type Si-nanowire-based field-effect transistors for electric detection of a biomarker: Matrix metalloproteinase-9

Seung Hyun Lee, Kye Jin Jeon, Wooyoung Lee, Ahmi Choi, Hyo Il Jung, Cheol Joo Kim, Moon Ho Jo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We studied the electric detection of a biomarker by using p-type Si-nanowire-based field-effect transistors (FETs) for biological applications. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire FETs. The gatedependent I - VSD curves revealed that the conductance of a Si-nanowire FET increased with increasing negative Vo. The conductance of the Si nanowire FET depended upon the existence of negatively charged streptavidin binding to a biotin with a peptide and Matrix metalloproteinase-9 (MMP-9), cutting the peptide. Our results suggest that Si-nanowire FETs can be used to detect MMP-9 activity.

Original languageEnglish
Pages (from-to)232-235
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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