Page overwritingmethod for performance improvement of NAND flash memories

Samkyu Won, Eui-Young Chung, Duckju Kim, Junseop Chung, Bongseok Han, Hyukjun Lee

Research output: Contribution to journalLetter

Abstract

This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ~ 47.5 times faster page update time with one overwrite allowance and 1.3 ~ 18.7 with four overwrites allowance compared with conventional method.

Original languageEnglish
JournalIEICE Electronics Express
Volume10
Issue number6
DOIs
Publication statusPublished - 2013 Apr 16

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Flash memory
allowances
flash
Hardware
hardware

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Won, Samkyu ; Chung, Eui-Young ; Kim, Duckju ; Chung, Junseop ; Han, Bongseok ; Lee, Hyukjun. / Page overwritingmethod for performance improvement of NAND flash memories. In: IEICE Electronics Express. 2013 ; Vol. 10, No. 6.
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Page overwritingmethod for performance improvement of NAND flash memories. / Won, Samkyu; Chung, Eui-Young; Kim, Duckju; Chung, Junseop; Han, Bongseok; Lee, Hyukjun.

In: IEICE Electronics Express, Vol. 10, No. 6, 16.04.2013.

Research output: Contribution to journalLetter

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AU - Won, Samkyu

AU - Chung, Eui-Young

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AU - Han, Bongseok

AU - Lee, Hyukjun

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