Abstract
We fabricated 350° C low temperature solution-processed zinc tin oxide thin film transistors by employing H2O wet annealing, which is considerably lower than widely used 500 °C. We have optimized 500 °C H2O wet annealing condition to achieve good electrical characteristics such as threshold voltage and saturation mobility.
| Original language | English |
|---|---|
| Title of host publication | 33rd International Display Research Conference 2013, EuroDisplay 2013 |
| Publisher | Blackwell Publishing Ltd. |
| Pages | 123-125 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781510815315 |
| DOIs | |
| Publication status | Published - 2013 Jan 1 |
| Event | 33rd International Display Research Conference 2013, EuroDisplay 2013 - London, United Kingdom Duration: 2013 Sep 16 → 2013 Sep 19 |
Publication series
| Name | Digest of Technical Papers - SID International Symposium |
|---|---|
| Volume | 44 |
| ISSN (Print) | 0097-966X |
| ISSN (Electronic) | 2168-0159 |
Other
| Other | 33rd International Display Research Conference 2013, EuroDisplay 2013 |
|---|---|
| Country | United Kingdom |
| City | London |
| Period | 13/9/16 → 13/9/19 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
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Cite this
Lee, J. S., Lee, S. Y., Han, M. K., Kim, Y. H., & Kwon, J. Y. (2013). Paper no P36: Optimization of H2O annealing for high-performance low-temperature solution-processed oxide thin-film transistors. In 33rd International Display Research Conference 2013, EuroDisplay 2013 (pp. 123-125). (Digest of Technical Papers - SID International Symposium; Vol. 44). Blackwell Publishing Ltd.. https://doi.org/10.1002/sdtp.12