Paper no P36: Optimization of H2O annealing for high-performance low-temperature solution-processed oxide thin-film transistors

Jeong Soo Lee; Soo Yeon Lee; Min Koo Han; Yong Hoon Kim; Jang Yeon Kwon

doi:10.1002/sdtp.12

Paper no P36: Optimization of H₂O annealing for high-performance low-temperature solution-processed oxide thin-film transistors

Jeong Soo Lee, Soo Yeon Lee, Min Koo Han, Yong Hoon Kim, Jang Yeon Kwon

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricated 350° C low temperature solution-processed zinc tin oxide thin film transistors by employing H₂O wet annealing, which is considerably lower than widely used 500 °C. We have optimized 500 °C H₂O wet annealing condition to achieve good electrical characteristics such as threshold voltage and saturation mobility.

Original language	English
Title of host publication	33rd International Display Research Conference 2013, EuroDisplay 2013
Publisher	Blackwell Publishing Ltd.
Pages	123-125
Number of pages	3
ISBN (Electronic)	9781510815315
DOIs	https://doi.org/10.1002/sdtp.12
Publication status	Published - 2013
Event	33rd International Display Research Conference 2013, EuroDisplay 2013 - London, United Kingdom Duration: 2013 Sep 16 → 2013 Sep 19

Publication series

Name	Digest of Technical Papers - SID International Symposium
Volume	44
ISSN (Print)	0097-966X
ISSN (Electronic)	2168-0159

Other

Other	33rd International Display Research Conference 2013, EuroDisplay 2013
Country/Territory	United Kingdom
City	London
Period	13/9/16 → 13/9/19

Bibliographical note

Publisher Copyright:
© (2013) by SID-the Society for Information Display All rights reserved.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1002/sdtp.12

Cite this

Lee, J. S., Lee, S. Y., Han, M. K., Kim, Y. H., & Kwon, J. Y. (2013). Paper no P36: Optimization of H₂O annealing for high-performance low-temperature solution-processed oxide thin-film transistors. In 33rd International Display Research Conference 2013, EuroDisplay 2013 (pp. 123-125). (Digest of Technical Papers - SID International Symposium; Vol. 44). Blackwell Publishing Ltd.. https://doi.org/10.1002/sdtp.12

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title = "Paper no P36: Optimization of H2O annealing for high-performance low-temperature solution-processed oxide thin-film transistors",

abstract = "We fabricated 350° C low temperature solution-processed zinc tin oxide thin film transistors by employing H2O wet annealing, which is considerably lower than widely used 500 °C. We have optimized 500 °C H2O wet annealing condition to achieve good electrical characteristics such as threshold voltage and saturation mobility.",

author = "Lee, {Jeong Soo} and Lee, {Soo Yeon} and Han, {Min Koo} and Kim, {Yong Hoon} and Kwon, {Jang Yeon}",

note = "Publisher Copyright: {\textcopyright} (2013) by SID-the Society for Information Display All rights reserved.; 33rd International Display Research Conference 2013, EuroDisplay 2013 ; Conference date: 16-09-2013 Through 19-09-2013",

year = "2013",

doi = "10.1002/sdtp.12",

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Lee, JS, Lee, SY, Han, MK, Kim, YH & Kwon, JY 2013, Paper no P36: Optimization of H₂O annealing for high-performance low-temperature solution-processed oxide thin-film transistors. in 33rd International Display Research Conference 2013, EuroDisplay 2013. Digest of Technical Papers - SID International Symposium, vol. 44, Blackwell Publishing Ltd., pp. 123-125, 33rd International Display Research Conference 2013, EuroDisplay 2013, London, United Kingdom, 13/9/16. https://doi.org/10.1002/sdtp.12

Paper no P36 : Optimization of H₂O annealing for high-performance low-temperature solution-processed oxide thin-film transistors. / Lee, Jeong Soo; Lee, Soo Yeon; Han, Min Koo et al.

33rd International Display Research Conference 2013, EuroDisplay 2013. Blackwell Publishing Ltd., 2013. p. 123-125 (Digest of Technical Papers - SID International Symposium; Vol. 44).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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