Paper no P36: Optimization of H2O annealing for high-performance low-temperature solution-processed oxide thin-film transistors

Jeong Soo Lee, Soo Yeon Lee, Min Koo Han, Yong Hoon Kim, Jang Yeon Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated 350° C low temperature solution-processed zinc tin oxide thin film transistors by employing H2O wet annealing, which is considerably lower than widely used 500 °C. We have optimized 500 °C H2O wet annealing condition to achieve good electrical characteristics such as threshold voltage and saturation mobility.

Original languageEnglish
Title of host publication33rd International Display Research Conference 2013, EuroDisplay 2013
PublisherBlackwell Publishing Ltd.
Pages123-125
Number of pages3
ISBN (Electronic)9781510815315
DOIs
Publication statusPublished - 2013 Jan 1
Event33rd International Display Research Conference 2013, EuroDisplay 2013 - London, United Kingdom
Duration: 2013 Sep 162013 Sep 19

Publication series

NameDigest of Technical Papers - SID International Symposium
Volume44
ISSN (Print)0097-966X
ISSN (Electronic)2168-0159

Other

Other33rd International Display Research Conference 2013, EuroDisplay 2013
CountryUnited Kingdom
CityLondon
Period13/9/1613/9/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Lee, J. S., Lee, S. Y., Han, M. K., Kim, Y. H., & Kwon, J. Y. (2013). Paper no P36: Optimization of H2O annealing for high-performance low-temperature solution-processed oxide thin-film transistors. In 33rd International Display Research Conference 2013, EuroDisplay 2013 (pp. 123-125). (Digest of Technical Papers - SID International Symposium; Vol. 44). Blackwell Publishing Ltd.. https://doi.org/10.1002/sdtp.12