@inproceedings{77dd6a5efb7e4e3db255de86650063da,
title = "Paper no P36: Optimization of H2O annealing for high-performance low-temperature solution-processed oxide thin-film transistors",
abstract = "We fabricated 350° C low temperature solution-processed zinc tin oxide thin film transistors by employing H2O wet annealing, which is considerably lower than widely used 500 °C. We have optimized 500 °C H2O wet annealing condition to achieve good electrical characteristics such as threshold voltage and saturation mobility.",
author = "Lee, {Jeong Soo} and Lee, {Soo Yeon} and Han, {Min Koo} and Kim, {Yong Hoon} and Kwon, {Jang Yeon}",
note = "Publisher Copyright: {\textcopyright} (2013) by SID-the Society for Information Display All rights reserved. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 33rd International Display Research Conference 2013, EuroDisplay 2013 ; Conference date: 16-09-2013 Through 19-09-2013",
year = "2013",
doi = "10.1002/sdtp.12",
language = "English",
series = "Digest of Technical Papers - SID International Symposium",
publisher = "Blackwell Publishing Ltd.",
pages = "123--125",
booktitle = "33rd International Display Research Conference 2013, EuroDisplay 2013",
}