Abstract
We fabricated 350° C low temperature solution-processed zinc tin oxide thin film transistors by employing H2O wet annealing, which is considerably lower than widely used 500 °C. We have optimized 500 °C H2O wet annealing condition to achieve good electrical characteristics such as threshold voltage and saturation mobility.
Original language | English |
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Title of host publication | 33rd International Display Research Conference 2013, EuroDisplay 2013 |
Publisher | Blackwell Publishing Ltd. |
Pages | 123-125 |
Number of pages | 3 |
ISBN (Electronic) | 9781510815315 |
DOIs | |
Publication status | Published - 2013 |
Event | 33rd International Display Research Conference 2013, EuroDisplay 2013 - London, United Kingdom Duration: 2013 Sep 16 → 2013 Sep 19 |
Publication series
Name | Digest of Technical Papers - SID International Symposium |
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Volume | 44 |
ISSN (Print) | 0097-966X |
ISSN (Electronic) | 2168-0159 |
Other
Other | 33rd International Display Research Conference 2013, EuroDisplay 2013 |
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Country/Territory | United Kingdom |
City | London |
Period | 13/9/16 → 13/9/19 |
Bibliographical note
Publisher Copyright:© (2013) by SID-the Society for Information Display All rights reserved.
All Science Journal Classification (ASJC) codes
- Engineering(all)