Parametric characterization of self-heating in depletion-type Si micro-ring modulators

Myung Jin Shin; Yoojin Ban; Byung Min Yu; Jinsoo Rhim; Lars Zimmermann; Woo Young Choi

doi:10.1109/JSTQE.2016.2560149

Parametric characterization of self-heating in depletion-type Si micro-ring modulators

Myung Jin Shin, Yoojin Ban, Byung Min Yu, Jinsoo Rhim, Lars Zimmermann, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The influence of self-heating on the static transmission characteristics of depletion-type Si micro-ring modulators (MRMs) is investigated. Self-heating, caused by free-carrier absorption of the input light inside the doped ring waveguide, increases the effective refractive index of the ring waveguide and results in the red-shifted resonance wavelength. This phenomenon is modeled based on the coupled-mode equation with a newly-introduced self-heating coefficient R. The accuracy of our model is confirmed by measurement. In addition, dependence of R on device size and doping concentration is experimentally investigated and the resulting dependence is explained.

Original language	English
Article number	7462176
Pages (from-to)	116-122
Number of pages	7
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2016.2560149
Publication status	Published - 2016 Nov 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea funded by the Korean government under Grant 2015R1A2A2A01007772

Publisher Copyright:
© 1995-2012 IEEE.

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2016.2560149

Cite this

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abstract = "The influence of self-heating on the static transmission characteristics of depletion-type Si micro-ring modulators (MRMs) is investigated. Self-heating, caused by free-carrier absorption of the input light inside the doped ring waveguide, increases the effective refractive index of the ring waveguide and results in the red-shifted resonance wavelength. This phenomenon is modeled based on the coupled-mode equation with a newly-introduced self-heating coefficient R. The accuracy of our model is confirmed by measurement. In addition, dependence of R on device size and doping concentration is experimentally investigated and the resulting dependence is explained.",

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AU - Zimmermann, Lars

AU - Choi, Woo Young

PY - 2016/11/1

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AB - The influence of self-heating on the static transmission characteristics of depletion-type Si micro-ring modulators (MRMs) is investigated. Self-heating, caused by free-carrier absorption of the input light inside the doped ring waveguide, increases the effective refractive index of the ring waveguide and results in the red-shifted resonance wavelength. This phenomenon is modeled based on the coupled-mode equation with a newly-introduced self-heating coefficient R. The accuracy of our model is confirmed by measurement. In addition, dependence of R on device size and doping concentration is experimentally investigated and the resulting dependence is explained.

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Parametric characterization of self-heating in depletion-type Si micro-ring modulators

Abstract

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