Parametric characterization of self-heating in Si micro-ring modulators

M. J. Shin, B. M. Yu, L. Zimmermann, W. Y. Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Influence of self-heating on Si Micro-Ring Modulator (MRM) characteristics is modeled by adding a newly-introduced self-heating coefficient to the existing coupled-mode model. With this, Si MRM transmission spectra and modulation frequency responses are accurately modeled for different input optical powers producing different amounts of self-heating.

Original languageEnglish
Title of host publication2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016
PublisherIEEE Computer Society
Pages66-67
Number of pages2
ISBN (Electronic)9781509019038
DOIs
Publication statusPublished - 2016 Nov 8
Event13th IEEE International Conference on Group IV Photonics, GFP 2016 - Shanghai, China
Duration: 2016 Aug 242016 Aug 26

Publication series

NameIEEE International Conference on Group IV Photonics GFP
Volume2016-November
ISSN (Print)1949-2081

Other

Other13th IEEE International Conference on Group IV Photonics, GFP 2016
CountryChina
CityShanghai
Period16/8/2416/8/26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Shin, M. J., Yu, B. M., Zimmermann, L., & Choi, W. Y. (2016). Parametric characterization of self-heating in Si micro-ring modulators. In 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016 (pp. 66-67). [7739112] (IEEE International Conference on Group IV Photonics GFP; Vol. 2016-November). IEEE Computer Society. https://doi.org/10.1109/GROUP4.2016.7739112