Described is a systematic methodology for modelling the parametric performance of GaAs multiple quantum well (MQW) avalanche photodiodes (APDs). Through application to MQW APDs, it is shown that using a small number of test devices with varying active diameters, barrier and well widths, and doping concentrations enables prediction of the expected performance variation of APD gain and noise in larger population of devices. The method compares favorably with Monte Carlo techniques and allows device yield prediction prior to high volume manufacturing in order to evaluate the impact of both design decisions and process capability.
|Number of pages||14|
|Journal||IEEE Transactions on Semiconductor Manufacturing|
|Publication status||Published - 1999|
|Event||Proceedings of the 1998 ICMTS - Kanazawa, Jpn|
Duration: 1998 Mar 23 → 1998 Mar 26
Bibliographical noteFunding Information:
Manuscript received November 4, 1997; revised November 10, 1998. This work was supported by NASA under Contract NAGW-2753 and NSF under Grant DDM-9 358 163. The authors are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 USA. Publisher Item Identifier S 0894-6507(99)03775-6.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering