Parametric manufacturing yield modeling of GaAs/AlGaAs multiple quantum well avalanche photodiodes

Ilgu Yun, Gary S. May

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Described is a systematic methodology for modelling the parametric performance of GaAs multiple quantum well (MQW) avalanche photodiodes (APDs). Through application to MQW APDs, it is shown that using a small number of test devices with varying active diameters, barrier and well widths, and doping concentrations enables prediction of the expected performance variation of APD gain and noise in larger population of devices. The method compares favorably with Monte Carlo techniques and allows device yield prediction prior to high volume manufacturing in order to evaluate the impact of both design decisions and process capability.

Original languageEnglish
Pages (from-to)238-251
Number of pages14
JournalIEEE Transactions on Semiconductor Manufacturing
Volume12
Issue number2
DOIs
Publication statusPublished - 1999
EventProceedings of the 1998 ICMTS - Kanazawa, Jpn
Duration: 1998 Mar 231998 Mar 26

Bibliographical note

Funding Information:
Manuscript received November 4, 1997; revised November 10, 1998. This work was supported by NASA under Contract NAGW-2753 and NSF under Grant DDM-9 358 163. The authors are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 USA. Publisher Item Identifier S 0894-6507(99)03775-6.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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