Described is a systematic methodology for modelling the parametric performance of GaAs multiple quantum well (MQW) avalanche photodiodes (APDs). Through application to MQW APDs, it is shown that using a small number of test devices with varying active diameters, barrier and well widths, and doping concentrations enables prediction of the expected performance variation of APD gain and noise in larger population of devices. The method compares favorably with Monte Carlo techniques and allows device yield prediction prior to high volume manufacturing in order to evaluate the impact of both design decisions and process capability.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering