Parametric manufacturing yield modeling of GaAs/AlGaAs multiple quantum well avalanche photodiodes

Ilgu Yun, Gary S. May

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Described is a systematic methodology for modelling the parametric performance of GaAs multiple quantum well (MQW) avalanche photodiodes (APDs). Through application to MQW APDs, it is shown that using a small number of test devices with varying active diameters, barrier and well widths, and doping concentrations enables prediction of the expected performance variation of APD gain and noise in larger population of devices. The method compares favorably with Monte Carlo techniques and allows device yield prediction prior to high volume manufacturing in order to evaluate the impact of both design decisions and process capability.

Original languageEnglish
Pages (from-to)238-251
Number of pages14
JournalIEEE Transactions on Semiconductor Manufacturing
Volume12
Issue number2
DOIs
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1998 ICMTS - Kanazawa, Jpn
Duration: 1998 Mar 231998 Mar 26

Fingerprint

Avalanche photodiodes
avalanches
Semiconductor quantum wells
photodiodes
aluminum gallium arsenides
manufacturing
quantum wells
predictions
Doping (additives)
methodology
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

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Parametric manufacturing yield modeling of GaAs/AlGaAs multiple quantum well avalanche photodiodes. / Yun, Ilgu; May, Gary S.

In: IEEE Transactions on Semiconductor Manufacturing, Vol. 12, No. 2, 01.12.1999, p. 238-251.

Research output: Contribution to journalConference article

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