Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes

Kyung Soo Suh, Jong Lam Lee, Hyung-Ho Park, Chan Ho Kim, Jae Jin Lee, Kee Soo Nam

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.

Original languageEnglish
Pages (from-to)172-176
Number of pages5
JournalMaterials Science and Engineering B
Volume37
Issue number1-3
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Passivation
passivity
oxygen plasma
Gallium
Arsenic
arsenic
gallium
Chemical analysis
Plasmas
sulfidation
Oxygen
Photoresists
photoresists
surface properties
Surface properties
sulfur
Sulfur
X ray photoelectron spectroscopy
photoelectron spectroscopy
wafers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Suh, Kyung Soo ; Lee, Jong Lam ; Park, Hyung-Ho ; Kim, Chan Ho ; Lee, Jae Jin ; Nam, Kee Soo. / Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes. In: Materials Science and Engineering B. 1996 ; Vol. 37, No. 1-3. pp. 172-176.
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abstract = "Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.",
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Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes. / Suh, Kyung Soo; Lee, Jong Lam; Park, Hyung-Ho; Kim, Chan Ho; Lee, Jae Jin; Nam, Kee Soo.

In: Materials Science and Engineering B, Vol. 37, No. 1-3, 01.01.1996, p. 172-176.

Research output: Contribution to journalArticle

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T1 - Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes

AU - Suh, Kyung Soo

AU - Lee, Jong Lam

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AU - Lee, Jae Jin

AU - Nam, Kee Soo

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AB - Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.

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