TY - JOUR
T1 - Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes
AU - Suh, Kyung Soo
AU - Lee, Jong Lam
AU - Park, Hyung Ho
AU - Kim, Chan Ho
AU - Lee, Jae Jin
AU - Nam, Kee Soo
PY - 1996/2
Y1 - 1996/2
N2 - Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.
AB - Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.
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U2 - 10.1016/0921-5107(95)01480-2
DO - 10.1016/0921-5107(95)01480-2
M3 - Article
AN - SCOPUS:0042037668
VL - 37
SP - 172
EP - 176
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -