Abstract
Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.
| Original language | English |
|---|---|
| Pages (from-to) | 172-176 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B |
| Volume | 37 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 1996 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
}
Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes. / Suh, Kyung Soo; Lee, Jong Lam; Park, Hyung-Ho; Kim, Chan Ho; Lee, Jae Jin; Nam, Kee Soo.
In: Materials Science and Engineering B, Vol. 37, No. 1-3, 01.01.1996, p. 172-176.Research output: Contribution to journal › Article
TY - JOUR
T1 - Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes
AU - Suh, Kyung Soo
AU - Lee, Jong Lam
AU - Park, Hyung-Ho
AU - Kim, Chan Ho
AU - Lee, Jae Jin
AU - Nam, Kee Soo
PY - 1996/1/1
Y1 - 1996/1/1
N2 - Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.
AB - Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.
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U2 - 10.1016/0921-5107(95)01480-2
DO - 10.1016/0921-5107(95)01480-2
M3 - Article
VL - 37
SP - 172
EP - 176
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -