Passivation effects on the stability of pentacene thin-film transistors with SnO2 prepared by ion-beam-assisted deposition

Woo Jin Kim, Won Hoe Koo, Sung Jin Jo, Chang Su Kim, Hong Koo Baik, Jiyoul Lee, Seongil Im

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion-beam-assisted deposition (IBAD) was investigated. When a buffer layer of 100-nm SnO2 film had been thermally deposited to reduce ion-induced damage prior to the IBAD process, our encapsulated organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm2 V that was initially 0.62 cm2 V s, while the OTFTs without a buffer layer showed a 60% reduction in field-effect mobility after the IBAD process. However, surprisingly, the mobility was sustained up to one month and then gradually degraded down to 0.35 cm2 V s, which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼ 104), which was reduced from ∼ 106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to good protection of permeation against H2 O into the devices with the IBAD SnO2 thin film, which was identified as having a dense amorphous microstructure with lots of OH groups. Passivation effects on the electrical properties of OTFTs are discussed in terms of the physical and chemical properties of the barrier films.

Original languageEnglish
Pages (from-to)2357-2362
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number6
DOIs
Publication statusPublished - 2005 Nov 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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