Passivation properties of OLEDs with aluminum cathodes prepared by ion-beam-assisted deposition process

Soon Moon Jeong, Won Hoi Koo, Sang Hun Choi, Sung Jin Jo, Hong Koo Baik, Seong Min Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A long-lived organic light emitting diode (OLED) was fabricated using a dense aluminum cathode prepared by the ion-beam-assisted deposition (IBAD) process. We investigated the passivation properties of ion-beam-assisted and thermal evaporation-induced aluminum cathodes mounted on Ph-PPV. The dense and highly packed Al cathode effectively prevents the permeation of H 2O and O 2 through pinhole defects, which results in retarding dark spot growth. Employing thin Al buffer layer diminished Ar + ion-induced damages in Ph-PPV and limited permeation against H 2O and O 2. The interface between Al and Ph-PPV may be modified in IBAD case, even though buffered Al layer was deposited to 30 nm by thermal evaporation prior to Ar + ion beam irradiation. It is believed that the buffered Al film cannot screen the Ar + ions or Al atoms wholly due to the existence of pinholes or non-deposited regions among the columnar structures.

Original languageEnglish
Pages (from-to)352-361
Number of pages10
JournalApplied Surface Science
Volume241
Issue number3-4
DOIs
Publication statusPublished - 2005 Mar 15

Fingerprint

Ion beam assisted deposition
Organic light emitting diodes (OLED)
Aluminum
Passivation
Cathodes
Thermal evaporation
Permeation
Ion beams
Ions
Buffer layers
Irradiation
Atoms
Defects

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Jeong, Soon Moon ; Koo, Won Hoi ; Choi, Sang Hun ; Jo, Sung Jin ; Baik, Hong Koo ; Lee, Seong Min. / Passivation properties of OLEDs with aluminum cathodes prepared by ion-beam-assisted deposition process. In: Applied Surface Science. 2005 ; Vol. 241, No. 3-4. pp. 352-361.
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abstract = "A long-lived organic light emitting diode (OLED) was fabricated using a dense aluminum cathode prepared by the ion-beam-assisted deposition (IBAD) process. We investigated the passivation properties of ion-beam-assisted and thermal evaporation-induced aluminum cathodes mounted on Ph-PPV. The dense and highly packed Al cathode effectively prevents the permeation of H 2O and O 2 through pinhole defects, which results in retarding dark spot growth. Employing thin Al buffer layer diminished Ar + ion-induced damages in Ph-PPV and limited permeation against H 2O and O 2. The interface between Al and Ph-PPV may be modified in IBAD case, even though buffered Al layer was deposited to 30 nm by thermal evaporation prior to Ar + ion beam irradiation. It is believed that the buffered Al film cannot screen the Ar + ions or Al atoms wholly due to the existence of pinholes or non-deposited regions among the columnar structures.",
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Passivation properties of OLEDs with aluminum cathodes prepared by ion-beam-assisted deposition process. / Jeong, Soon Moon; Koo, Won Hoi; Choi, Sang Hun; Jo, Sung Jin; Baik, Hong Koo; Lee, Seong Min.

In: Applied Surface Science, Vol. 241, No. 3-4, 15.03.2005, p. 352-361.

Research output: Contribution to journalArticle

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