Passivation role of sulfur and etching behavior in plasma etched TiW using SF6 and BCl3 gases

Il Sup Jin, Hyung Ho Park, Kwang Ho Kwon, Chang Il Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

TiW is an effective diffusion barrier between Si substrate and various metals. In particular it prevents the hillock formation and junction spiking associated with Al-metallization. However, the complexity of the plasma chemistry for TiW etching makes it difficult to explain the etching behavior. Reactive ion etching of TiW was performed to explain the role of sulfur on etching behavior using SF6 and BCl3 gases with various mixing ratios. The surface state of etched TiW was analyzed using X-ray photoelectron spectroscopy and the formation of metal-S bonds was found after etching with the plasma gases containing SF6. These bonds are shown to prevent oxidation of the etched TiW surface, especially Ti, during exposure to air. The etch rate decreased as the mixing ratio of BCl3 gas increased and was almost zero with BCl3 only. Sulfur could promote the etch rate by surface cleaning and removal of native oxide.

Original languageEnglish
Pages (from-to)223-229
Number of pages7
JournalMicroelectronic Engineering
Volume33
Issue number1-4
Publication statusPublished - 1997 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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