Pb(ZrxTi1-x)O3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

Ho Jung Sun, Eun Seok Choi, Soon Yong Kweon, Nam Kyeong Kim, Seung Jin Yeom, Jae Sung Roh, Hyun Chul Sohn

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated a Pb(ZrxTi1-x)O3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO2/Ir electrodes separated by inter-electrode dielectric (IED) SiO2. This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO 2, which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.

Original languageEnglish
Pages (from-to)L1504-L1506
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number12 B
Publication statusPublished - 2003 Dec 15

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this