Pb(Zr x Ti 1-x )O 3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO 2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

Ho Jung Sun, Eun Seok Choi, Soon Yong Kweon, Nam Kyeong Kim, Seung Jin Yeom, Jae Sung Roh, Hyunchul Sohn

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated a Pb(Zr x Ti 1-x )O 3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO 2 /Ir electrodes separated by inter-electrode dielectric (IED) SiO 2 . This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO 2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO 2 , which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number12 B
Publication statusPublished - 2003 Dec 15

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random access memory
Ferroelectric materials
capacitors
Capacitors
Data storage equipment
Thin films
Electrodes
electrodes
thin films
Perovskite

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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title = "Pb(Zr x Ti 1-x )O 3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO 2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor",
abstract = "We investigated a Pb(Zr x Ti 1-x )O 3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO 2 /Ir electrodes separated by inter-electrode dielectric (IED) SiO 2 . This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO 2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO 2 , which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.",
author = "Sun, {Ho Jung} and Choi, {Eun Seok} and Kweon, {Soon Yong} and Kim, {Nam Kyeong} and Yeom, {Seung Jin} and Roh, {Jae Sung} and Hyunchul Sohn",
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month = "12",
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language = "English",
volume = "42",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
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Pb(Zr x Ti 1-x )O 3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO 2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor . / Sun, Ho Jung; Choi, Eun Seok; Kweon, Soon Yong; Kim, Nam Kyeong; Yeom, Seung Jin; Roh, Jae Sung; Sohn, Hyunchul.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 12 B, 15.12.2003.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Pb(Zr x Ti 1-x )O 3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO 2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

AU - Sun, Ho Jung

AU - Choi, Eun Seok

AU - Kweon, Soon Yong

AU - Kim, Nam Kyeong

AU - Yeom, Seung Jin

AU - Roh, Jae Sung

AU - Sohn, Hyunchul

PY - 2003/12/15

Y1 - 2003/12/15

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AB - We investigated a Pb(Zr x Ti 1-x )O 3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO 2 /Ir electrodes separated by inter-electrode dielectric (IED) SiO 2 . This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO 2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO 2 , which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.

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