PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications

Jonghyun Rho, Sang Jin Kim, Wook Heo, Nae Eung Lee, Hwan Soo Lee, Jong Hyun Ahn

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Abstract

This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

Original languageEnglish
Article number5512660
Pages (from-to)1017-1019
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number9
DOIs
Publication statusPublished - 2010 Sep

Bibliographical note

Funding Information:
Manuscript received May 25, 2010; accepted June 9, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported in part by Basic Science Research Program under Grants R01-2008-000-20533-0 and 2010-0015035 and in part by the WCU Program under Grant R32-2008-000-10124-0 through the National Research Foundation funded by the Ministry of Education, Science and Technology and a Grant-in-Aid for Industrial Source Technology Development Programs from the Korea Ministry of Knowledge Economy under Grant 10033309. The authors Jonghyun Rho and Sang Jin Kim contributed equally to this work. The review of this letter was arranged by Editor T. Wang.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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