PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications

Jonghyun Rho, Sang Jin Kim, Wook Heo, Nae Eung Lee, Hwan Soo Lee, Jong Hyun Ahn

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

Original languageEnglish
Article number5512660
Pages (from-to)1017-1019
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number9
DOIs
Publication statusPublished - 2010 Sep 1

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Ferroelectric thin films
Plastics
Data storage equipment
Substrates
Flexible electronics
Hysteresis loops
Fabrication
Electric potential
Film capacitor

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Rho, Jonghyun ; Kim, Sang Jin ; Heo, Wook ; Lee, Nae Eung ; Lee, Hwan Soo ; Ahn, Jong Hyun. / PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 9. pp. 1017-1019.
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PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications. / Rho, Jonghyun; Kim, Sang Jin; Heo, Wook; Lee, Nae Eung; Lee, Hwan Soo; Ahn, Jong Hyun.

In: IEEE Electron Device Letters, Vol. 31, No. 9, 5512660, 01.09.2010, p. 1017-1019.

Research output: Contribution to journalArticle

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