PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications

Jonghyun Rho; Sang Jin Kim; Wook Heo; Nae Eung Lee; Hwan Soo Lee; Jong Hyun Ahn

doi:10.1109/LED.2010.2053344

PbZr_xTi_1-xO₃ ferroelectric thin-film capacitors for flexible nonvolatile memory applications

Jonghyun Rho, Sang Jin Kim, Wook Heo, Nae Eung Lee, Hwan Soo Lee, Jong Hyun Ahn

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

This letter reports the fabrication of PbZr_xTi _1-xO₃ (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P _r of ∼20μC/cm² and a V_c of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

Original language	English
Article number	5512660
Pages (from-to)	1017-1019
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1109/LED.2010.2053344
Publication status	Published - 2010 Sept

Bibliographical note

Funding Information:
Manuscript received May 25, 2010; accepted June 9, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported in part by Basic Science Research Program under Grants R01-2008-000-20533-0 and 2010-0015035 and in part by the WCU Program under Grant R32-2008-000-10124-0 through the National Research Foundation funded by the Ministry of Education, Science and Technology and a Grant-in-Aid for Industrial Source Technology Development Programs from the Korea Ministry of Knowledge Economy under Grant 10033309. The authors Jonghyun Rho and Sang Jin Kim contributed equally to this work. The review of this letter was arranged by Editor T. Wang.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2053344

Cite this

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title = "PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications",

abstract = "This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.",

author = "Jonghyun Rho and Kim, {Sang Jin} and Wook Heo and Lee, {Nae Eung} and Lee, {Hwan Soo} and Ahn, {Jong Hyun}",

note = "Funding Information: Manuscript received May 25, 2010; accepted June 9, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported in part by Basic Science Research Program under Grants R01-2008-000-20533-0 and 2010-0015035 and in part by the WCU Program under Grant R32-2008-000-10124-0 through the National Research Foundation funded by the Ministry of Education, Science and Technology and a Grant-in-Aid for Industrial Source Technology Development Programs from the Korea Ministry of Knowledge Economy under Grant 10033309. The authors Jonghyun Rho and Sang Jin Kim contributed equally to this work. The review of this letter was arranged by Editor T. Wang.",

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AU - Rho, Jonghyun

AU - Kim, Sang Jin

AU - Heo, Wook

AU - Lee, Nae Eung

AU - Lee, Hwan Soo

AU - Ahn, Jong Hyun

N1 - Funding Information: Manuscript received May 25, 2010; accepted June 9, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported in part by Basic Science Research Program under Grants R01-2008-000-20533-0 and 2010-0015035 and in part by the WCU Program under Grant R32-2008-000-10124-0 through the National Research Foundation funded by the Ministry of Education, Science and Technology and a Grant-in-Aid for Industrial Source Technology Development Programs from the Korea Ministry of Knowledge Economy under Grant 10033309. The authors Jonghyun Rho and Sang Jin Kim contributed equally to this work. The review of this letter was arranged by Editor T. Wang.

PY - 2010/9

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N2 - This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

AB - This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

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