TY - JOUR
T1 - Pd-Ge-Au based hybrid ohmic contacts to high-low doped GaAs field-effect transistor
AU - Kwak, Joon Seop
AU - Lee, Jong Lam
AU - Baik, Hong Koo
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1997/9
Y1 - 1997/9
N2 - Effects of an intermediate layer, such as Mo or Ti, have been studied for developing Pd-Ge-Au based hybrid ohmic contacts in a high-low doped GaAs metal-semiconductor field-effect transistor (MESFET). The Pd-Ge-Au contact without the intermediate layer produces an alloyed AuGe contact at a high annealing temperature above 400°C. When Mo is added between Pd/Ge and Au, nonspiking Pd/Ge contact is formed at a low annealing temperature of 300°C. The addition of Ti, however, results in an ohmic contact with a low resistance of 0.43 Ω·mm in a wide annealing temperature ranging from 340 to 420°C. Auger depth profile and X-ray diffraction results suggest that the low resistance of the Pd/Ge/Ti/Au ohmic contact is due to formation both the Pd/Ge contact and AuGe contact through the appropriate control of Au indiffusion by Ti. The MESFET with the Pd/Ge/Ti/Au contact displays good DC characteristics. This supports that the Pd/Ge/Ti/Au contact is well suitable for application to high-low doped GaAs MESFETs due to its low-resistance and wide-process-window.
AB - Effects of an intermediate layer, such as Mo or Ti, have been studied for developing Pd-Ge-Au based hybrid ohmic contacts in a high-low doped GaAs metal-semiconductor field-effect transistor (MESFET). The Pd-Ge-Au contact without the intermediate layer produces an alloyed AuGe contact at a high annealing temperature above 400°C. When Mo is added between Pd/Ge and Au, nonspiking Pd/Ge contact is formed at a low annealing temperature of 300°C. The addition of Ti, however, results in an ohmic contact with a low resistance of 0.43 Ω·mm in a wide annealing temperature ranging from 340 to 420°C. Auger depth profile and X-ray diffraction results suggest that the low resistance of the Pd/Ge/Ti/Au ohmic contact is due to formation both the Pd/Ge contact and AuGe contact through the appropriate control of Au indiffusion by Ti. The MESFET with the Pd/Ge/Ti/Au contact displays good DC characteristics. This supports that the Pd/Ge/Ti/Au contact is well suitable for application to high-low doped GaAs MESFETs due to its low-resistance and wide-process-window.
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U2 - 10.1143/jjap.36.5451
DO - 10.1143/jjap.36.5451
M3 - Article
AN - SCOPUS:0031219966
VL - 36
SP - 5451
EP - 5458
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 A
ER -