We report on the fabrication of complementary thin-film transistor (TFT) inverter with organic-inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n channel, we have fabricated a model device of hybrid complementary TFT inverters at a low channel deposition temperature below 100 °C. Although those p and n channels were deposited on high-temperature-processed thin gate oxide/ p-Si here, our complementary device demonstrated good potentials toward air-stable logic applications, operating with an excellent voltage gain of ∼26 at 2 V as well as with a dynamic response of ∼10 ms.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from KOSEF (Program Nos. M1-0214-00-0228 and R01-2006-000-11277-0) and Brain Korea 21 program. S.I. also thanks K. H. Joo at Samsung Electronics Inc. for supplying the high quality double layer dielectrics. M.S.O. was supported by the Seoul Science Fellowship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)