Pentacene and ZnO hybrid channels for complementary thin-film transistor inverters operating at 2 v

Min Suk Oh, D. K. Hwang, Kimoon Lee, Won Jun Choi, Jae Hoon Kim, Seongil Im, Seungjun Lee

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

We report on the fabrication of complementary thin-film transistor (TFT) inverter with organic-inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n channel, we have fabricated a model device of hybrid complementary TFT inverters at a low channel deposition temperature below 100 °C. Although those p and n channels were deposited on high-temperature-processed thin gate oxide/ p-Si here, our complementary device demonstrated good potentials toward air-stable logic applications, operating with an excellent voltage gain of ∼26 at 2 V as well as with a dynamic response of ∼10 ms.

Original languageEnglish
Article number076104
JournalJournal of Applied Physics
Volume102
Issue number7
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KOSEF (Program Nos. M1-0214-00-0228 and R01-2006-000-11277-0) and Brain Korea 21 program. S.I. also thanks K. H. Joo at Samsung Electronics Inc. for supplying the high quality double layer dielectrics. M.S.O. was supported by the Seoul Science Fellowship.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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