Pentacene-based low-leakage memory transistor with dielectric/electrolytic/ dielectric polymer layers

Wonjun Choi, Seok Hwan Noh, D. K. Hwang, Jeong M. Choi, Sungjin Jang, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report on the pentacene memory thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)/poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/PVP triple-layer gate insulator. The top PVP dielectric in the triple layer was intended to provide a smooth hydrophobic surface to ensure good crystalline growth of pentacene channel, while the bottom PVP was for leakage protection. The middle P(VDF/TrFE) layer, known as ferroelectric material, revealed an electrolytic or ion movement signature rather than ferroelectric in our sandwich form of organic insulator. Our TFTs showed remarkably reduced leakage current, good memory window (large threshold voltage shift under slow gate-bias swing), and good field-effect mobility (0.2 cm2 V s). Retention time for the electrolytic memory effects was measured to be more than 104 s under a constant-read condition.

Original languageEnglish
Pages (from-to)H47-H50
JournalElectrochemical and Solid-State Letters
Volume11
Issue number3
DOIs
Publication statusPublished - 2008 Jan 29

Fingerprint

Polymers
Transistors
leakage
transistors
Thin film transistors
vinylidene
Data storage equipment
Ferroelectric materials
fluorides
polymers
insulators
ferroelectric materials
thin films
Threshold voltage
Leakage currents
threshold voltage
signatures
Crystalline materials
shift
Ions

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Choi, Wonjun ; Noh, Seok Hwan ; Hwang, D. K. ; Choi, Jeong M. ; Jang, Sungjin ; Kim, Eugene ; Im, Seongil. / Pentacene-based low-leakage memory transistor with dielectric/electrolytic/ dielectric polymer layers. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 11, No. 3. pp. H47-H50.
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Pentacene-based low-leakage memory transistor with dielectric/electrolytic/ dielectric polymer layers. / Choi, Wonjun; Noh, Seok Hwan; Hwang, D. K.; Choi, Jeong M.; Jang, Sungjin; Kim, Eugene; Im, Seongil.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 3, 29.01.2008, p. H47-H50.

Research output: Contribution to journalArticle

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