Pentacene-based TTFTs with polymer gate dielectric and NiOx electrodes

D. K. Hwang, Ji Hoon Park, Jiyoul Lee, Jeong M. Choi, Jae Hoon Kim, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based transparent thin-film transistors (TTFTs) that employ pentacene, NiOx, and poly-4-vinylphenol (PVP) for channel, source-drain (S/D) electrode, and gate dielectric, respectively. Spin-coated PVP showed decent dielectric strength (1.5 MV/cm) and constant (k = 3.9). Semitransparent NiOx for S/D electrodes of which the work function is well matched to that of pentacene were deposited on a 50 nm thick pentacene channel by thermal evaporation of NiO powder. NiOx, electrodes showed effective transmittance of ∼40% in the visible range along with good sheet resistance of ∼60 Ω/□. Our pentacene-based TTFT exhibited a field effect mobility as large as 0.07 cm2/V s in the dark, and an on/off current ratio of 105. Our work demonstrates that spin-coated PVP and thermal evaporated NiO x are promising gate dielectric and S/D electrode materials for organic TTFTs, respectively.

Original languageEnglish
Pages (from-to)G140-G142
JournalElectrochemical and Solid-State Letters
Volume8
Issue number6
DOIs
Publication statusPublished - 2005 Jul 4

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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