Pentacene thin-film on organic/inorganic nanohybrid dielectrics for ZnO charge injection memory transistor

Sung Hoon Cha, Aaron Park, Kwang H. Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We report on the fabrication of ZnO-channel charge injection memory thin-film transistors (TFTs). Our non-volatile memory TFT has a thin pentacene on top of a dielectric sandwich which has 3 nm-thin inserted potential well as a hole trap layer. The thin pentacene in contact with Au top electrode supports effective hole injection from pentacene into the inserted well under +8 V programming gate pulse while those injected holes are effectively ejected out under -8 V pulse, so that ZnO channel below the dielectric may have two different current states: write and erase. Our device operates at less than 2 V and shows a retention time of about 1000 s after programmed at +8 V, along with an effective program/erase ratio of 5-20.

Original languageEnglish
Pages (from-to)159-163
Number of pages5
JournalOrganic Electronics
Volume11
Issue number1
DOIs
Publication statusPublished - 2010 Jan

Bibliographical note

Funding Information:
This work was supported by the KOSEF (NRL Program: Grant No. 2009-8-0403 ), by the MKE [IT R&D Program ( 2008-8-0613 ), fundamental R&D Program for Core Technology of Materials ( 2008-8-1410 )], by Seoul R&BD Program ( ST090839 ), and by the Brain Korea 21 Program . S.H. Cha acknowledges the Seoul Science Fellowship.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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