We report on the fabrication of ZnO-channel charge injection memory thin-film transistors (TFTs). Our non-volatile memory TFT has a thin pentacene on top of a dielectric sandwich which has 3 nm-thin inserted potential well as a hole trap layer. The thin pentacene in contact with Au top electrode supports effective hole injection from pentacene into the inserted well under +8 V programming gate pulse while those injected holes are effectively ejected out under -8 V pulse, so that ZnO channel below the dielectric may have two different current states: write and erase. Our device operates at less than 2 V and shows a retention time of about 1000 s after programmed at +8 V, along with an effective program/erase ratio of 5-20.
Bibliographical noteFunding Information:
This work was supported by the KOSEF (NRL Program: Grant No. 2009-8-0403 ), by the MKE [IT R&D Program ( 2008-8-0613 ), fundamental R&D Program for Core Technology of Materials ( 2008-8-1410 )], by Seoul R&BD Program ( ST090839 ), and by the Brain Korea 21 Program . S.H. Cha acknowledges the Seoul Science Fellowship.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering