Abstract
The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 2689-2691 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2003 Sep 29 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass. / Lee, Jiyoul; Kim, Jae Hoon; Im, Seongil.
In: Applied Physics Letters, Vol. 83, No. 13, 29.09.2003, p. 2689-2691.Research output: Contribution to journal › Article
TY - JOUR
T1 - Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass
AU - Lee, Jiyoul
AU - Kim, Jae Hoon
AU - Im, Seongil
PY - 2003/9/29
Y1 - 2003/9/29
N2 - The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.
AB - The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.
UR - http://www.scopus.com/inward/record.url?scp=0142088983&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0142088983&partnerID=8YFLogxK
U2 - 10.1063/1.1613997
DO - 10.1063/1.1613997
M3 - Article
AN - SCOPUS:0142088983
VL - 83
SP - 2689
EP - 2691
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
ER -