Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

Jiyoul Lee, J. H. Kim, Seongil Im

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.

Original languageEnglish
Pages (from-to)2689-2691
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number13
DOIs
Publication statusPublished - 2003 Sep 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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