The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)