Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

Jiyoul Lee, J. H. Kim, Seongil Im

Research output: Contribution to journalArticlepeer-review

97 Citations (Scopus)


The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.

Original languageEnglish
Pages (from-to)2689-2691
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2003 Sep 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Pentacene thin-film transistors with Al<sub>2</sub>O<sub>3+x</sub> gate dielectric films deposited on indium-tin-oxide glass'. Together they form a unique fingerprint.

Cite this