Abstract
The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.
Original language | English |
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Pages (from-to) | 2689-2691 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2003 Sep 29 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)