Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

Jiyoul Lee; J. H. Kim; Seongil Im

doi:10.1063/1.1613997

Pentacene thin-film transistors with Al₂O_3+x gate dielectric films deposited on indium-tin-oxide glass

Jiyoul Lee, J. H. Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

The fabrication of pentacene thin-film transistors (TFT) with Al ₂O_3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al₂O_3+x is a promising gate dielectric material for organic TFTs.

Original language	English
Pages (from-to)	2689-2691
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	13
DOIs	https://doi.org/10.1063/1.1613997
Publication status	Published - 2003 Sep 29

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1613997

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abstract = "The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.",

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AB - The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.

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Pentacene thin-film transistors with Al₂O_3+x gate dielectric films deposited on indium-tin-oxide glass

Abstract

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