Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

Research output: Contribution to journalArticle

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Abstract

The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.

Original languageEnglish
Pages (from-to)2689-2691
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number13
DOIs
Publication statusPublished - 2003 Sep 29

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indium oxides
tin oxides
transistors
glass
thin films
magnetron sputtering
fabrication
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The fabrication of pentacene thin-film transistors (TFT) with Al 2O3+x films as the gate dielectric that has been deposited on indium-tin-oxide glass was reported. It was deposited by rf magnetron sputtering at room temperature. It was demonstrated that RT-deposited Al2O3+x is a promising gate dielectric material for organic TFTs.",
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Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass. / Lee, Jiyoul; Kim, Jae Hoon; Im, Seongil.

In: Applied Physics Letters, Vol. 83, No. 13, 29.09.2003, p. 2689-2691.

Research output: Contribution to journalArticle

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