We report on the fabrication of low-voltage pentacene thin-film transistors (TFTs) adopting poly-4-vinylphenol (PVP)/titanium oxide (TiOx) double-layer dielectrics deposited on an indium-tin oxide glass substrate. The total capacitance of the 45 nm thick PVP100 nm thick (or 200 nm thick) TiOx double-layer dielectric was as high as 57-61 nF cm2 while the k values turn out to be 25-34. Despite small dielectric strength (∼0.6 MVcm) of high- k TiOx layers, our pentacene TFT with the 45 nm thick PVP100 nm thick TiOx double-layer dielectric exhibited an excellent mobility and an on/off current ratio of 1.52 cm2 V s and ∼1× 103, respectively, operating at a low gate voltage of -3 V.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering