Percolation-limited dual charge transport in vertical p -n heterojunction schottky barrier transistors

Dong Un Lim; Seongchan Kim; Young Jin Choi; Sae Byeok Jo; Jeong Ho Cho

doi:10.1021/acs.nanolett.0c00523

Percolation-limited dual charge transport in vertical p -n heterojunction schottky barrier transistors

Dong Un Lim, Seongchan Kim, Young Jin Choi, Sae Byeok Jo, Jeong Ho Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC₇₁BM, is employed to simultaneously realize vertical electron and hole transports through the separate p-channel and n-channel. The gate-modulated graphene work functions enable broad modulation of SB heights at both the graphene-PBDB-T and graphene-PC₇₁BM heterointerfaces. Interestingly, the fine-tuned energy-level alignment enables an exclusive injection of holes or electrons unlike conventional BHJ-based ambipolar transistors, leading to a clear transition between p-channel and n-channel single-carrier-like transistor characteristics. Furthermore, the improved percolation-limited dual charge transport in vertical architecture results in high charge carrier density and high-speed on-off switching characteristics, providing a high on-off current ratio exceeding 10⁵ and an operation speed of 100 kHz. Solution-based on-substrate fabrications of low-power complementary logic gates such as NOT, NOR, and NAND are also successfully performed.

Original language	English
Pages (from-to)	3585-3592
Number of pages	8
Journal	Nano letters
Volume	20
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.0c00523
Publication status	Published - 2020 May 13

Bibliographical note

Funding Information:
This work was supported by a grant from the Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT, & Future Planning (NRF-2020R1A2C2007819), the Creative Materials Discovery Program (NRF-2019M3D1A1078299) through the NRF of Korea funded by the Ministry of Science and ICT, and the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (2013M3A6A5073177), Korea.

Publisher Copyright:
© 2020 American Chemical Society.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.0c00523

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title = "Percolation-limited dual charge transport in vertical p -n heterojunction schottky barrier transistors",

abstract = "Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC71BM, is employed to simultaneously realize vertical electron and hole transports through the separate p-channel and n-channel. The gate-modulated graphene work functions enable broad modulation of SB heights at both the graphene-PBDB-T and graphene-PC71BM heterointerfaces. Interestingly, the fine-tuned energy-level alignment enables an exclusive injection of holes or electrons unlike conventional BHJ-based ambipolar transistors, leading to a clear transition between p-channel and n-channel single-carrier-like transistor characteristics. Furthermore, the improved percolation-limited dual charge transport in vertical architecture results in high charge carrier density and high-speed on-off switching characteristics, providing a high on-off current ratio exceeding 105 and an operation speed of 100 kHz. Solution-based on-substrate fabrications of low-power complementary logic gates such as NOT, NOR, and NAND are also successfully performed.",

author = "Lim, {Dong Un} and Seongchan Kim and Choi, {Young Jin} and Jo, {Sae Byeok} and Cho, {Jeong Ho}",

note = "Funding Information: This work was supported by a grant from the Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT, & Future Planning (NRF-2020R1A2C2007819), the Creative Materials Discovery Program (NRF-2019M3D1A1078299) through the NRF of Korea funded by the Ministry of Science and ICT, and the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (2013M3A6A5073177), Korea. Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",

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AU - Lim, Dong Un

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AU - Cho, Jeong Ho

N1 - Funding Information: This work was supported by a grant from the Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT, & Future Planning (NRF-2020R1A2C2007819), the Creative Materials Discovery Program (NRF-2019M3D1A1078299) through the NRF of Korea funded by the Ministry of Science and ICT, and the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (2013M3A6A5073177), Korea. Publisher Copyright: © 2020 American Chemical Society.

PY - 2020/5/13

Y1 - 2020/5/13

N2 - Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC71BM, is employed to simultaneously realize vertical electron and hole transports through the separate p-channel and n-channel. The gate-modulated graphene work functions enable broad modulation of SB heights at both the graphene-PBDB-T and graphene-PC71BM heterointerfaces. Interestingly, the fine-tuned energy-level alignment enables an exclusive injection of holes or electrons unlike conventional BHJ-based ambipolar transistors, leading to a clear transition between p-channel and n-channel single-carrier-like transistor characteristics. Furthermore, the improved percolation-limited dual charge transport in vertical architecture results in high charge carrier density and high-speed on-off switching characteristics, providing a high on-off current ratio exceeding 105 and an operation speed of 100 kHz. Solution-based on-substrate fabrications of low-power complementary logic gates such as NOT, NOR, and NAND are also successfully performed.

AB - Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC71BM, is employed to simultaneously realize vertical electron and hole transports through the separate p-channel and n-channel. The gate-modulated graphene work functions enable broad modulation of SB heights at both the graphene-PBDB-T and graphene-PC71BM heterointerfaces. Interestingly, the fine-tuned energy-level alignment enables an exclusive injection of holes or electrons unlike conventional BHJ-based ambipolar transistors, leading to a clear transition between p-channel and n-channel single-carrier-like transistor characteristics. Furthermore, the improved percolation-limited dual charge transport in vertical architecture results in high charge carrier density and high-speed on-off switching characteristics, providing a high on-off current ratio exceeding 105 and an operation speed of 100 kHz. Solution-based on-substrate fabrications of low-power complementary logic gates such as NOT, NOR, and NAND are also successfully performed.

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Percolation-limited dual charge transport in vertical p -n heterojunction schottky barrier transistors

Abstract

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