Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

Eun Chul Park, Sang Hyun Baek, Taek Sang Song, Jun Bo Yoon, Euisik Yoon

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.

Original languageEnglish
Pages (from-to)721-724
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 2003 Aug 18
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 2003 Jun 82003 Jun 13

Fingerprint

voltage controlled oscillators
Variable frequency oscillators
inductors
microelectromechanical systems
MEMS
Q factors
CMOS
Phase noise
Metals
metals
frequency ranges
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Park, Eun Chul ; Baek, Sang Hyun ; Song, Taek Sang ; Yoon, Jun Bo ; Yoon, Euisik. / Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors. In: IEEE MTT-S International Microwave Symposium Digest. 2003 ; Vol. 2. pp. 721-724.
@article{ae77c3628c434dfea2d939ad3dced58b,
title = "Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors",
abstract = "In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.",
author = "Park, {Eun Chul} and Baek, {Sang Hyun} and Song, {Taek Sang} and Yoon, {Jun Bo} and Euisik Yoon",
year = "2003",
month = "8",
day = "18",
language = "English",
volume = "2",
pages = "721--724",
journal = "IEEE MTT-S International Microwave Symposium Digest",
issn = "0149-645X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors. / Park, Eun Chul; Baek, Sang Hyun; Song, Taek Sang; Yoon, Jun Bo; Yoon, Euisik.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 18.08.2003, p. 721-724.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

AU - Park, Eun Chul

AU - Baek, Sang Hyun

AU - Song, Taek Sang

AU - Yoon, Jun Bo

AU - Yoon, Euisik

PY - 2003/8/18

Y1 - 2003/8/18

N2 - In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.

AB - In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.

UR - http://www.scopus.com/inward/record.url?scp=0043095381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0043095381&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0043095381

VL - 2

SP - 721

EP - 724

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -