Performance comparison of two types of silicon avalanche photodetectors based on N-well/P-substrate and P+/N-well junctions fabricated with standard CMOS technology

Myung Jae Lee, Woo Young Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and P+/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the P+/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.

Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalJournal of the Optical Society of Korea
Volume15
Issue number1
DOIs
Publication statusPublished - 2011 Mar

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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