Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor

Joohee Jeon, Tae Il Lee, Ji Hyuk Choi, Jyoti Prakash Kar, Won Jin Choi, Hong Koo Baik, Jae Min Myoung

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number2
DOIs
Publication statusPublished - 2011 Jan 28

Fingerprint

Carbon Nanotubes
Thin film transistors
pressing
Field effect transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
Oxide films
metal oxides
Carbon nanotubes
field effect transistors
Metals
carbon nanotubes
transistors
thin films
Ohmic contacts
Contact resistance
electrode materials
contact resistance

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

@article{4ed755d0ae024073ac20e9b6eb9e0133,
title = "Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor",
abstract = "The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30{\%} and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.",
author = "Joohee Jeon and Lee, {Tae Il} and Choi, {Ji Hyuk} and Kar, {Jyoti Prakash} and Choi, {Won Jin} and Baik, {Hong Koo} and Myoung, {Jae Min}",
year = "2011",
month = "1",
day = "28",
doi = "10.1149/1.3505361",
language = "English",
volume = "14",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor. / Jeon, Joohee; Lee, Tae Il; Choi, Ji Hyuk; Kar, Jyoti Prakash; Choi, Won Jin; Baik, Hong Koo; Myoung, Jae Min.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 2, 28.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor

AU - Jeon, Joohee

AU - Lee, Tae Il

AU - Choi, Ji Hyuk

AU - Kar, Jyoti Prakash

AU - Choi, Won Jin

AU - Baik, Hong Koo

AU - Myoung, Jae Min

PY - 2011/1/28

Y1 - 2011/1/28

N2 - The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.

AB - The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.

UR - http://www.scopus.com/inward/record.url?scp=78951494013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78951494013&partnerID=8YFLogxK

U2 - 10.1149/1.3505361

DO - 10.1149/1.3505361

M3 - Article

AN - SCOPUS:78951494013

VL - 14

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 2

ER -