The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering