Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor

Joohee Jeon, Tae Il Lee, Ji Hyuk Choi, Jyoti Prakash Kar, Won Jin Choi, Hong Koo Baik, Jae Min Myoung

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.

Original languageEnglish
Pages (from-to)H76-H79
JournalElectrochemical and Solid-State Letters
Volume14
Issue number2
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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