In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The O2-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (Ion), saturation mobility (μsat ) and bias stability. The O2-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O2-HPA-treated ZTO TFT showed μsat, threshold voltage (Vth), subthreshold slope (S.S) and on/off ratio of 2.35 cm2/V·s, 4.36 V, 0.58 V/dec., and 1.16×107, respectively.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2012|
|Event||49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States|
Duration: 2012 Jun 3 → 2012 Jun 8
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. 2011-0028819].
© 2012 SID.
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