Performance enhancement of solution-processed zn-sn-o tfts using high-pressure annealing

Hyun Soo Lim; You Seung Rim; Dong Lim Kim; Hyun Jae Kim

doi:10.1002/j.2168-0159.2012.tb05985.x

Performance enhancement of solution-processed zn-sn-o tfts using high-pressure annealing

Hyun Soo Lim, You Seung Rim, Dong Lim Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The O₂-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (I_on), saturation mobility (μ_sat ) and bias stability. The O₂-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O₂-HPA-treated ZTO TFT showed μ_sat, threshold voltage (V_th), subthreshold slope (S.S) and on/off ratio of 2.35 cm²/V·s, 4.36 V, 0.58 V/dec., and 1.16×10⁷, respectively.

Original language	English
Pages (from-to)	1104-1107
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	43
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb05985.x
Publication status	Published - 2012
Event	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 2012 Jun 3 → 2012 Jun 8

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. 2011-0028819].

Publisher Copyright:
© 2012 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/j.2168-0159.2012.tb05985.x

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@article{cad8e92eee0d45ec9b6ed4752c76c0c5,

title = "Performance enhancement of solution-processed zn-sn-o tfts using high-pressure annealing",

abstract = "In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The O2-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (Ion), saturation mobility (μsat ) and bias stability. The O2-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O2-HPA-treated ZTO TFT showed μsat, threshold voltage (Vth), subthreshold slope (S.S) and on/off ratio of 2.35 cm2/V·s, 4.36 V, 0.58 V/dec., and 1.16×107, respectively.",

author = "Lim, {Hyun Soo} and Rim, {You Seung} and Kim, {Dong Lim} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. 2011-0028819]. Publisher Copyright: {\textcopyright} 2012 SID.; 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

year = "2012",

doi = "10.1002/j.2168-0159.2012.tb05985.x",

language = "English",

volume = "43",

pages = "1104--1107",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

}

TY - JOUR

T1 - Performance enhancement of solution-processed zn-sn-o tfts using high-pressure annealing

AU - Lim, Hyun Soo

AU - Rim, You Seung

AU - Kim, Dong Lim

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. 2011-0028819]. Publisher Copyright: © 2012 SID.

PY - 2012

Y1 - 2012

N2 - In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The O2-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (Ion), saturation mobility (μsat ) and bias stability. The O2-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O2-HPA-treated ZTO TFT showed μsat, threshold voltage (Vth), subthreshold slope (S.S) and on/off ratio of 2.35 cm2/V·s, 4.36 V, 0.58 V/dec., and 1.16×107, respectively.

AB - In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The O2-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (Ion), saturation mobility (μsat ) and bias stability. The O2-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O2-HPA-treated ZTO TFT showed μsat, threshold voltage (Vth), subthreshold slope (S.S) and on/off ratio of 2.35 cm2/V·s, 4.36 V, 0.58 V/dec., and 1.16×107, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85018284920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018284920&partnerID=8YFLogxK

U2 - 10.1002/j.2168-0159.2012.tb05985.x

DO - 10.1002/j.2168-0159.2012.tb05985.x

M3 - Conference article

AN - SCOPUS:85018284920

SN - 0097-966X

VL - 43

SP - 1104

EP - 1107

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Performance enhancement of solution-processed zn-sn-o tfts using high-pressure annealing

Abstract

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