Performance improvement of metal-Al2O3-HfO 2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers

Jinho Oh; Heedo Na; Kyumin Lee; Hyunchul Sohn; Min Young Heo

doi:10.1116/1.4807842

Performance improvement of metal-Al₂O₃-HfO ₂-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO₂ tunnel barriers

Jinho Oh, Heedo Na, Kyumin Lee, Hyunchul Sohn, Min Young Heo

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Physical properties of Hf-aluminate (HA) films with various compositions, deposited by atomic layer deposition, were investigated in terms of microstructure, band-gap, and band-offset with respect to Si. Charge trap flash (CTF) memory devices based on HA/SiO₂ stacks as tunnel barriers were also fabricated and characterized. Modulation of HA film composition produced controlled changes of the film's band-gap and band-offset. Additionally, the tunneling efficiency of the HA/SiO₂ tunnel barrier stacks was observed to be higher than that for a single SiO₂ tunnel barrier, in particular at high voltage bias. The band-engineered CTF memory devices with HA/SiO₂ tunnel barriers showed improved program/erase speed compared with those with single SiO₂ tunnel barrier. The Al-rich HA/SiO ₂ tunnel barriers showed a longer charge retention time with superior endurance characteristics; in contrast, the Hf-rich HA/SiO₂ tunnel barrier showed degraded charge retention because of current leakage through crystallized regions in the film.

Original language	English
Article number	041201
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	31
Issue number	4
DOIs	https://doi.org/10.1116/1.4807842
Publication status	Published - 2013 Jul

Bibliographical note

Funding Information:
This work was financially supported by the IT R&D program of MKE/KEIT [Development of novel 3D stacked devices and core materials for the next generation flash memory] and the second stage of the Brain Korea 21 project (BK21).

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{7f69c1b256d146fe8ea5b5b76301e370,

title = "Performance improvement of metal-Al2O3-HfO 2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers",

abstract = "Physical properties of Hf-aluminate (HA) films with various compositions, deposited by atomic layer deposition, were investigated in terms of microstructure, band-gap, and band-offset with respect to Si. Charge trap flash (CTF) memory devices based on HA/SiO2 stacks as tunnel barriers were also fabricated and characterized. Modulation of HA film composition produced controlled changes of the film's band-gap and band-offset. Additionally, the tunneling efficiency of the HA/SiO2 tunnel barrier stacks was observed to be higher than that for a single SiO2 tunnel barrier, in particular at high voltage bias. The band-engineered CTF memory devices with HA/SiO2 tunnel barriers showed improved program/erase speed compared with those with single SiO2 tunnel barrier. The Al-rich HA/SiO 2 tunnel barriers showed a longer charge retention time with superior endurance characteristics; in contrast, the Hf-rich HA/SiO2 tunnel barrier showed degraded charge retention because of current leakage through crystallized regions in the film.",

author = "Jinho Oh and Heedo Na and Kyumin Lee and Hyunchul Sohn and Heo, {Min Young}",

note = "Funding Information: This work was financially supported by the IT R&D program of MKE/KEIT [Development of novel 3D stacked devices and core materials for the next generation flash memory] and the second stage of the Brain Korea 21 project (BK21). ",

year = "2013",

month = jul,

doi = "10.1116/1.4807842",

language = "English",

volume = "31",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

}

Performance improvement of metal-Al₂O₃-HfO ₂-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO₂ tunnel barriers. / Oh, Jinho; Na, Heedo; Lee, Kyumin; Sohn, Hyunchul; Heo, Min Young.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 4, 041201, 07.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Performance improvement of metal-Al2O3-HfO 2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers

AU - Oh, Jinho

AU - Na, Heedo

AU - Lee, Kyumin

AU - Sohn, Hyunchul

AU - Heo, Min Young

N1 - Funding Information: This work was financially supported by the IT R&D program of MKE/KEIT [Development of novel 3D stacked devices and core materials for the next generation flash memory] and the second stage of the Brain Korea 21 project (BK21).

PY - 2013/7

Y1 - 2013/7

N2 - Physical properties of Hf-aluminate (HA) films with various compositions, deposited by atomic layer deposition, were investigated in terms of microstructure, band-gap, and band-offset with respect to Si. Charge trap flash (CTF) memory devices based on HA/SiO2 stacks as tunnel barriers were also fabricated and characterized. Modulation of HA film composition produced controlled changes of the film's band-gap and band-offset. Additionally, the tunneling efficiency of the HA/SiO2 tunnel barrier stacks was observed to be higher than that for a single SiO2 tunnel barrier, in particular at high voltage bias. The band-engineered CTF memory devices with HA/SiO2 tunnel barriers showed improved program/erase speed compared with those with single SiO2 tunnel barrier. The Al-rich HA/SiO 2 tunnel barriers showed a longer charge retention time with superior endurance characteristics; in contrast, the Hf-rich HA/SiO2 tunnel barrier showed degraded charge retention because of current leakage through crystallized regions in the film.

AB - Physical properties of Hf-aluminate (HA) films with various compositions, deposited by atomic layer deposition, were investigated in terms of microstructure, band-gap, and band-offset with respect to Si. Charge trap flash (CTF) memory devices based on HA/SiO2 stacks as tunnel barriers were also fabricated and characterized. Modulation of HA film composition produced controlled changes of the film's band-gap and band-offset. Additionally, the tunneling efficiency of the HA/SiO2 tunnel barrier stacks was observed to be higher than that for a single SiO2 tunnel barrier, in particular at high voltage bias. The band-engineered CTF memory devices with HA/SiO2 tunnel barriers showed improved program/erase speed compared with those with single SiO2 tunnel barrier. The Al-rich HA/SiO 2 tunnel barriers showed a longer charge retention time with superior endurance characteristics; in contrast, the Hf-rich HA/SiO2 tunnel barrier showed degraded charge retention because of current leakage through crystallized regions in the film.

UR - http://www.scopus.com/inward/record.url?scp=84887446973&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887446973&partnerID=8YFLogxK

U2 - 10.1116/1.4807842

DO - 10.1116/1.4807842

M3 - Article

AN - SCOPUS:84887446973

VL - 31

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

M1 - 041201

ER -