Performance improvement of metal-Al2O3-HfO 2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers

Jinho Oh, Heedo Na, Kyumin Lee, Hyunchul Sohn, Min Young Heo

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Physical properties of Hf-aluminate (HA) films with various compositions, deposited by atomic layer deposition, were investigated in terms of microstructure, band-gap, and band-offset with respect to Si. Charge trap flash (CTF) memory devices based on HA/SiO2 stacks as tunnel barriers were also fabricated and characterized. Modulation of HA film composition produced controlled changes of the film's band-gap and band-offset. Additionally, the tunneling efficiency of the HA/SiO2 tunnel barrier stacks was observed to be higher than that for a single SiO2 tunnel barrier, in particular at high voltage bias. The band-engineered CTF memory devices with HA/SiO2 tunnel barriers showed improved program/erase speed compared with those with single SiO2 tunnel barrier. The Al-rich HA/SiO 2 tunnel barriers showed a longer charge retention time with superior endurance characteristics; in contrast, the Hf-rich HA/SiO2 tunnel barrier showed degraded charge retention because of current leakage through crystallized regions in the film.

Original languageEnglish
Article number041201
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 2013 Jul

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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