In this paper, we report on the DC and RF performances of recessed gate GaN MESFETs fabricated using an undoped highly resistive buffer layer. The performance of the device is found to be significantly improved compared with that of a device with an Mg-doped p--GaN buffer layer. The performance improvement stems from the resistance of an undoped layer being higher than that of a p--GaN buffer layer. The GaN MESFET fabricated with an undoped highly resistive layer exhibits a current saturation at VDS = 4 V and VGS = 0 V and a pinch-off at VGS = -3 V. The peak drain currents of the device are about 230 mA/mm and 215 mA/mm at 300 K and 473 K, respectively. The room temperature fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. A physics-based analytic model was applied and found to be useful for predicting the DC performance of the GaN MESFET.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2001 Feb 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)