Performance of GaN MESFETs with an undoped highly resistive buffer layer

Won Sang Lee, Ki Woong Chung, Moo Whan Shin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we report on the DC and RF performances of recessed gate GaN MESFETs fabricated using an undoped highly resistive buffer layer. The performance of the device is found to be significantly improved compared with that of a device with an Mg-doped p--GaN buffer layer. The performance improvement stems from the resistance of an undoped layer being higher than that of a p--GaN buffer layer. The GaN MESFET fabricated with an undoped highly resistive layer exhibits a current saturation at VDS = 4 V and VGS = 0 V and a pinch-off at VGS = -3 V. The peak drain currents of the device are about 230 mA/mm and 215 mA/mm at 300 K and 473 K, respectively. The room temperature fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. A physics-based analytic model was applied and found to be useful for predicting the DC performance of the GaN MESFET.

Original languageEnglish
Pages (from-to)146-150
Number of pages5
JournalJournal of the Korean Physical Society
Volume38
Issue number2
Publication statusPublished - 2001 Feb 1

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field effect transistors
buffers
direct current
stems
saturation
physics
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "In this paper, we report on the DC and RF performances of recessed gate GaN MESFETs fabricated using an undoped highly resistive buffer layer. The performance of the device is found to be significantly improved compared with that of a device with an Mg-doped p--GaN buffer layer. The performance improvement stems from the resistance of an undoped layer being higher than that of a p--GaN buffer layer. The GaN MESFET fabricated with an undoped highly resistive layer exhibits a current saturation at VDS = 4 V and VGS = 0 V and a pinch-off at VGS = -3 V. The peak drain currents of the device are about 230 mA/mm and 215 mA/mm at 300 K and 473 K, respectively. The room temperature fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. A physics-based analytic model was applied and found to be useful for predicting the DC performance of the GaN MESFET.",
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Performance of GaN MESFETs with an undoped highly resistive buffer layer. / Lee, Won Sang; Chung, Ki Woong; Shin, Moo Whan.

In: Journal of the Korean Physical Society, Vol. 38, No. 2, 01.02.2001, p. 146-150.

Research output: Contribution to journalArticle

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