Performance of polygonal-shaped TFBARs and on-wafer tuning inductors

Jong Soo Kim, Kun Wook Kim, Myeong Gweon Gu, Jong Gwan Yook, Han Kyu Park

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

In this paper, two different shapes of thin film bulk acoustic resonators (TFBARs) are characterized with respect to electrode thickness and overall area, and gold plated on-wafer inductors are employed to tune the TFBAR filter performance. Air-gap type TFBARs are fabricated with aluminum nitride (AIN) as a piezoelectric material and platinum as top and bottom electrodes. Equivalent inductor model is employed for the tuning of fabricated TFBAR bandpass filters designed based on the modified Butterworth-Van Dyke (MBVD) equivalent circuit. Fabricated inductor revealed inductance of 3 nH and Q factor of about 8 at 2 GHz. It is clearly shown that tuning inductor can enlarge the bandwidth of the TFBAR ladder filters about 10 MHz and suppress the out-of-band rejection around 10 dB further.

Original languageEnglish
Pages (from-to)1759-1762
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
Publication statusPublished - 2003 Aug 18

Fingerprint

Acoustic resonators
inductors
Tuning
resonators
tuning
wafers
Thin films
acoustics
thin films
Ladder networks
filters
Electrodes
Aluminum nitride
electrodes
Piezoelectric materials
aluminum nitrides
Bandpass filters
bandpass filters
equivalent circuits
inductance

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kim, Jong Soo ; Kim, Kun Wook ; Gu, Myeong Gweon ; Yook, Jong Gwan ; Park, Han Kyu. / Performance of polygonal-shaped TFBARs and on-wafer tuning inductors. In: IEEE MTT-S International Microwave Symposium Digest. 2003 ; Vol. 3. pp. 1759-1762.
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Performance of polygonal-shaped TFBARs and on-wafer tuning inductors. / Kim, Jong Soo; Kim, Kun Wook; Gu, Myeong Gweon; Yook, Jong Gwan; Park, Han Kyu.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 3, 18.08.2003, p. 1759-1762.

Research output: Contribution to journalConference article

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AU - Kim, Kun Wook

AU - Gu, Myeong Gweon

AU - Yook, Jong Gwan

AU - Park, Han Kyu

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AB - In this paper, two different shapes of thin film bulk acoustic resonators (TFBARs) are characterized with respect to electrode thickness and overall area, and gold plated on-wafer inductors are employed to tune the TFBAR filter performance. Air-gap type TFBARs are fabricated with aluminum nitride (AIN) as a piezoelectric material and platinum as top and bottom electrodes. Equivalent inductor model is employed for the tuning of fabricated TFBAR bandpass filters designed based on the modified Butterworth-Van Dyke (MBVD) equivalent circuit. Fabricated inductor revealed inductance of 3 nH and Q factor of about 8 at 2 GHz. It is clearly shown that tuning inductor can enlarge the bandwidth of the TFBAR ladder filters about 10 MHz and suppress the out-of-band rejection around 10 dB further.

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