Thermoelectric oxides have been regarded as promising materials for power generation especially at high temperature. Among them, ZnO systems have been reported as useful n-type thermoelectrics because of high Seebeck coefficients and electrical conductivities at high temperature. In this study, we investigated polycrystalline ZnO systems doped with different donor ions Al 3+ and Ga3+. We investigated reasons of different solution limits and secondary phases and microstructures between these two donor-doped cases. Thermoelectric properties also showed different tendency between Al 3+-and Ga3+-doped ZnO systems because of their different structural properties. As a result, a maximum power factor value 9.18 × 10-4 W/mK2 at 1050 K was obtained in Zn 0.98Ga0.02O composition.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry