Phase analysis and thermoelectric properties of Zn1-xM xO (M= Al, Ga) samples

Kwang Hee Jung; Soon Mok Choi; Chang Hyun Lim; Won Seon Seo; Hyung Ho Park

doi:10.1002/sia.4987

Phase analysis and thermoelectric properties of Zn_1-xM _xO (M= Al, Ga) samples

Kwang Hee Jung, Soon Mok Choi, Chang Hyun Lim, Won Seon Seo, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Thermoelectric oxides have been regarded as promising materials for power generation especially at high temperature. Among them, ZnO systems have been reported as useful n-type thermoelectrics because of high Seebeck coefficients and electrical conductivities at high temperature. In this study, we investigated polycrystalline ZnO systems doped with different donor ions Al ³⁺ and Ga³⁺. We investigated reasons of different solution limits and secondary phases and microstructures between these two donor-doped cases. Thermoelectric properties also showed different tendency between Al ³⁺-and Ga³⁺-doped ZnO systems because of their different structural properties. As a result, a maximum power factor value 9.18 × 10^-4 W/mK² at 1050 K was obtained in Zn _0.98Ga_0.02O composition.

Original language	English
Pages (from-to)	1507-1510
Number of pages	4
Journal	Surface and Interface Analysis
Volume	44
Issue number	11-12
DOIs	https://doi.org/10.1002/sia.4987
Publication status	Published - 2012 Nov

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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abstract = "Thermoelectric oxides have been regarded as promising materials for power generation especially at high temperature. Among them, ZnO systems have been reported as useful n-type thermoelectrics because of high Seebeck coefficients and electrical conductivities at high temperature. In this study, we investigated polycrystalline ZnO systems doped with different donor ions Al 3+ and Ga3+. We investigated reasons of different solution limits and secondary phases and microstructures between these two donor-doped cases. Thermoelectric properties also showed different tendency between Al 3+-and Ga3+-doped ZnO systems because of their different structural properties. As a result, a maximum power factor value 9.18 × 10-4 W/mK2 at 1050 K was obtained in Zn 0.98Ga0.02O composition.",

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T1 - Phase analysis and thermoelectric properties of Zn1-xM xO (M= Al, Ga) samples

AU - Jung, Kwang Hee

AU - Choi, Soon Mok

AU - Lim, Chang Hyun

AU - Seo, Won Seon

AU - Park, Hyung Ho

PY - 2012/11

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AB - Thermoelectric oxides have been regarded as promising materials for power generation especially at high temperature. Among them, ZnO systems have been reported as useful n-type thermoelectrics because of high Seebeck coefficients and electrical conductivities at high temperature. In this study, we investigated polycrystalline ZnO systems doped with different donor ions Al 3+ and Ga3+. We investigated reasons of different solution limits and secondary phases and microstructures between these two donor-doped cases. Thermoelectric properties also showed different tendency between Al 3+-and Ga3+-doped ZnO systems because of their different structural properties. As a result, a maximum power factor value 9.18 × 10-4 W/mK2 at 1050 K was obtained in Zn 0.98Ga0.02O composition.

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Phase analysis and thermoelectric properties of Zn_1-xM _xO (M= Al, Ga) samples

Abstract

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