Abstract
Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO 2 phase was not observed, while phase separation into Sb2 O3 and Sb2 Te3 occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.
Original language | English |
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Article number | 012102 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2009 |
Bibliographical note
Funding Information:This research was supported by the National Research Project for PRAM Development sponsored by the Korean Ministry of Commerce, Industry, and Energy.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)