Phase change behavior in oxygen-incorporated Ge2Sb 2Te5 films

M. H. Jang; S. J. Park; D. H. Lim; M. H. Cho; K. H. Do; D. H. Ko; H. C. Sohn

doi:10.1063/1.3168551

Phase change behavior in oxygen-incorporated Ge₂Sb ₂Te₅ films

M. H. Jang, S. J. Park, D. H. Lim, M. H. Cho, K. H. Do, D. H. Ko, H. C. Sohn

Research output: Contribution to journal › Article

41 Citations (Scopus)

Abstract

Oxygen-incorporated Ge₂Sb₂Te₅ (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO ₂ phase was not observed, while phase separation into Sb₂ O₃ and Sb₂ Te₃ occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.

Original language	English
Article number	012102
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3168551
Publication status	Published - 2009 Jul 20

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Jang, M. H., Park, S. J., Lim, D. H., Cho, M. H., Do, K. H., Ko, D. H., & Sohn, H. C. (2009). Phase change behavior in oxygen-incorporated Ge₂Sb ₂Te₅ films. Applied Physics Letters, 95(1), [012102]. https://doi.org/10.1063/1.3168551

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abstract = "Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO 2 phase was not observed, while phase separation into Sb2 O3 and Sb2 Te3 occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.",

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AU - Do, K. H.

AU - Ko, D. H.

AU - Sohn, H. C.

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N2 - Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO 2 phase was not observed, while phase separation into Sb2 O3 and Sb2 Te3 occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.

AB - Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO 2 phase was not observed, while phase separation into Sb2 O3 and Sb2 Te3 occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.

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