Phase change behavior in oxygen-incorporated Ge2Sb 2Te5 films

M. H. Jang; S. J. Park; D. H. Lim; M. H. Cho; K. H. Do; D. H. Ko; H. C. Sohn

doi:10.1063/1.3168551

Phase change behavior in oxygen-incorporated Ge₂Sb ₂Te₅ films

M. H. Jang, S. J. Park, D. H. Lim, M. H. Cho, K. H. Do, D. H. Ko, H. C. Sohn

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Oxygen-incorporated Ge₂Sb₂Te₅ (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO ₂ phase was not observed, while phase separation into Sb₂ O₃ and Sb₂ Te₃ occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.

Original language	English
Article number	012102
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3168551
Publication status	Published - 2009

Bibliographical note

Funding Information:
This research was supported by the National Research Project for PRAM Development sponsored by the Korean Ministry of Commerce, Industry, and Energy.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{f04fefbcbf8b4faa8ffca7d39befcb63,

title = "Phase change behavior in oxygen-incorporated Ge2Sb 2Te5 films",

abstract = "Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO 2 phase was not observed, while phase separation into Sb2 O3 and Sb2 Te3 occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.",

author = "Jang, {M. H.} and Park, {S. J.} and Lim, {D. H.} and Cho, {M. H.} and Do, {K. H.} and Ko, {D. H.} and Sohn, {H. C.}",

note = "Funding Information: This research was supported by the National Research Project for PRAM Development sponsored by the Korean Ministry of Commerce, Industry, and Energy. ",

year = "2009",

doi = "10.1063/1.3168551",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Phase change behavior in oxygen-incorporated Ge2Sb 2Te5 films

AU - Jang, M. H.

AU - Park, S. J.

AU - Lim, D. H.

AU - Cho, M. H.

AU - Do, K. H.

AU - Ko, D. H.

AU - Sohn, H. C.

N1 - Funding Information: This research was supported by the National Research Project for PRAM Development sponsored by the Korean Ministry of Commerce, Industry, and Energy.

PY - 2009

Y1 - 2009

N2 - Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO 2 phase was not observed, while phase separation into Sb2 O3 and Sb2 Te3 occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.

AB - Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of GeK edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO 2 phase was not observed, while phase separation into Sb2 O3 and Sb2 Te3 occurred. The results indicate Ge-Te bonds with oxygen are related to structural stability.

UR - http://www.scopus.com/inward/record.url?scp=67650507838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650507838&partnerID=8YFLogxK

U2 - 10.1063/1.3168551

DO - 10.1063/1.3168551

M3 - Article

AN - SCOPUS:67650507838

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 012102

ER -