Bi2Te3 nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current-voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline-amorphous phase change in Bi 2Te3 nanowires can be induced by a voltage pulse.
|Number of pages||5|
|Publication status||Published - 2011 Apr 26|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering