Phase-change memory in Bi2Te3 nanowires

Nalae Han, Sung In Kim, Jeong Do Yang, Kyumin Lee, Hyunchul Sohn, Hye Mi So, Chi Won Ahn, Kyung Hwa Yoo

Research output: Contribution to journalArticle

35 Citations (Scopus)


Bi2Te3 nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current-voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline-amorphous phase change in Bi 2Te3 nanowires can be induced by a voltage pulse.

Original languageEnglish
Pages (from-to)1871-1875
Number of pages5
JournalAdvanced Materials
Issue number16
Publication statusPublished - 2011 Apr 26

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Han, N., Kim, S. I., Yang, J. D., Lee, K., Sohn, H., So, H. M., Ahn, C. W., & Yoo, K. H. (2011). Phase-change memory in Bi2Te3 nanowires. Advanced Materials, 23(16), 1871-1875.