Phase-change memory in Bi2Te3 nanowires

Nalae Han; Sung In Kim; Jeong Do Yang; Kyumin Lee; Hyunchul Sohn; Hye Mi So; Chi Won Ahn; Kyung Hwa Yoo

doi:10.1002/adma.201004746

Phase-change memory in Bi₂Te₃ nanowires

Nalae Han, Sung In Kim, Jeong Do Yang, Kyumin Lee, Hyunchul Sohn, Hye Mi So, Chi Won Ahn, Kyung Hwa Yoo

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Bi₂Te₃ nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current-voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline-amorphous phase change in Bi ₂Te₃ nanowires can be induced by a voltage pulse.

Original language	English
Pages (from-to)	1871-1875
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	16
DOIs	https://doi.org/10.1002/adma.201004746
Publication status	Published - 2011 Apr 26

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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author = "Nalae Han and Kim, {Sung In} and Yang, {Jeong Do} and Kyumin Lee and Hyunchul Sohn and So, {Hye Mi} and Ahn, {Chi Won} and Yoo, {Kyung Hwa}",

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AU - Han, Nalae

AU - Kim, Sung In

AU - Yang, Jeong Do

AU - Lee, Kyumin

AU - Sohn, Hyunchul

AU - So, Hye Mi

AU - Ahn, Chi Won

AU - Yoo, Kyung Hwa

PY - 2011/4/26

Y1 - 2011/4/26

N2 - Bi2Te3 nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current-voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline-amorphous phase change in Bi 2Te3 nanowires can be induced by a voltage pulse.

AB - Bi2Te3 nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current-voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline-amorphous phase change in Bi 2Te3 nanowires can be induced by a voltage pulse.

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Phase-change memory in Bi₂Te₃ nanowires

Abstract

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