Phase-change properties related to anharmonicity of local structure

Min Ahn, Kwang sik Jeong, Sungjin Park, Hoon Jung, Jeonghwa Han, Wonjun Yang, Dasol Kim, Jaehun Park, Mann Ho Cho

Research output: Contribution to journalArticlepeer-review


Ge-Sb-Te pseudo-binary compounds are known to be phase-change materials (PCM). Most of these chalcogenide compounds are candidate for future phase-change random access memory (PCRAM) applications since they show abrupt change on crystalline-amorphous phase-change process. For the use in next-generation applications, increase of retention properties and decrease of power needed for phase-change process are required. These phase-change properties depend on various material characteristics, and thermal conductivity is one of them. In this study, to introduce an easier method for evaluating the local structural anharmonicity of phase-change materials, optical pump terahertz (THz) probe experiments were performed. By investigating the phonon behaviours in PCM by this method and comparing them with local structural information extracted from extended X-ray absorption fine structure (EXAFS) on Ge1Sb2Te4 and Ge2Sb2Te5 films, the effects of resonant bonding on lattice anharmonicity and thermal conductivity were determined. As resonant bonding in the local structure get enhanced, local distortion of the system decrease which cause the decrease in anharmonicity. The quantitatively-measured anharmonicity obtained from the optical pump THz probe experiments can be closely related to the structural and electrical properties, thus reflecting well the difference of phase-change properties between Ge1Sb2Te4 and Ge2Sb2Te5 films.

Original languageEnglish
Pages (from-to)807-816
Number of pages10
JournalCurrent Applied Physics
Issue number6
Publication statusPublished - 2020 Jun

Bibliographical note

Funding Information:
We gratefully acknowledge the financial support provided by the Ministry of Trade, Industry & Energy (MOTIE) in Korea (Project No. 10045360 ) and the Korea Semiconductor Research Consortium (KSRC) through a project for developing source technology for future semiconductor devices, and Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (MSIP) (Grant No. 2016M3A7B4910398 ). In addition, we acknowledge the 10C, 8C, and fs-THz beamline in Pohang accelerator laboratory for their experimental help. Finally, we would like to thank Editage ( ) for English language editing.

Publisher Copyright:
© 2020 Korean Physical Society

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)


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