Phase-controlled growth of cobalt oxide thin films by atomic layer deposition

Soonyoung Jung, Dip K. Nandi, Seungmin Yeo, Hyungjun Kim, Yujin Jang, Jong Seong Bae, Tae Eun Hong, Soo Hyun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Cobalt oxide (CoO x ) thin films were deposited on thermally grown SiO 2 substrates by atomic layer deposition (ALD) using bis(1,4-di-iso-propyl-1,4-diazabutadiene)cobalt (C 16 H 32 N 4 Co) and oxygen (O 2 ) as reactants at deposition temperatures ranging from 125 to 300 °C. X-ray diffraction (XRD) and Raman spectroscopic analysis indicated that a mixed-phase oxide consisting of CoO and Co 3 O 4 was deposited at temperatures ranging from 125 to 250 °C. However, single-phase Co 3 O 4 was deposited above the deposition temperature of 275 °C. Further, analyses by Rutherford backscattering spectrometry, transmission electron microscopy, and selected area electron diffraction along with XRD and Raman spectroscopy revealed that the single-phase cobalt oxide film was stoichiometric crystalline (spinel structure) with negligible N and C impurities. The optical band gap of the single-phase Co 3 O 4 film was 1.98 eV and increased with decreasing deposition temperature. It was also shown that the mixed-phase cobalt oxide thin films could be converted into single-phase spinel Co 3 O 4 by annealing at 350 °C in O 2 ambient. It was further observed that the phase of the ALD-grown cobalt oxide thin film could be controlled by controlling the precursor or reactant pulsing condition. The study revealed that pure Co 3 O 4 phase could be grown at a relatively low temperature (250 °C) by using water vapor as a reactant. Therefore, this work systemically demonstrated several pathways to grow single-phase Co 3 O 4 by ALD using a novel metalorganic cobalt precursor.

Original languageEnglish
Pages (from-to)404-410
Number of pages7
JournalSurface and Coatings Technology
Volume337
DOIs
Publication statusPublished - 2018 Mar 15

Fingerprint

cobalt oxides
Atomic layer deposition
atomic layer epitaxy
Oxide films
Cobalt
Thin films
thin films
spinel
cobalt
Temperature
temperature
spectroscopic analysis
X ray diffraction
diffraction
Spectroscopic analysis
Optical band gaps
Steam
oxide films
water vapor
Rutherford backscattering spectroscopy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Jung, Soonyoung ; Nandi, Dip K. ; Yeo, Seungmin ; Kim, Hyungjun ; Jang, Yujin ; Bae, Jong Seong ; Hong, Tae Eun ; Kim, Soo Hyun. / Phase-controlled growth of cobalt oxide thin films by atomic layer deposition. In: Surface and Coatings Technology. 2018 ; Vol. 337. pp. 404-410.
@article{d3815bd1eb7340ce99d79a6927bd2c79,
title = "Phase-controlled growth of cobalt oxide thin films by atomic layer deposition",
abstract = "Cobalt oxide (CoO x ) thin films were deposited on thermally grown SiO 2 substrates by atomic layer deposition (ALD) using bis(1,4-di-iso-propyl-1,4-diazabutadiene)cobalt (C 16 H 32 N 4 Co) and oxygen (O 2 ) as reactants at deposition temperatures ranging from 125 to 300 °C. X-ray diffraction (XRD) and Raman spectroscopic analysis indicated that a mixed-phase oxide consisting of CoO and Co 3 O 4 was deposited at temperatures ranging from 125 to 250 °C. However, single-phase Co 3 O 4 was deposited above the deposition temperature of 275 °C. Further, analyses by Rutherford backscattering spectrometry, transmission electron microscopy, and selected area electron diffraction along with XRD and Raman spectroscopy revealed that the single-phase cobalt oxide film was stoichiometric crystalline (spinel structure) with negligible N and C impurities. The optical band gap of the single-phase Co 3 O 4 film was 1.98 eV and increased with decreasing deposition temperature. It was also shown that the mixed-phase cobalt oxide thin films could be converted into single-phase spinel Co 3 O 4 by annealing at 350 °C in O 2 ambient. It was further observed that the phase of the ALD-grown cobalt oxide thin film could be controlled by controlling the precursor or reactant pulsing condition. The study revealed that pure Co 3 O 4 phase could be grown at a relatively low temperature (250 °C) by using water vapor as a reactant. Therefore, this work systemically demonstrated several pathways to grow single-phase Co 3 O 4 by ALD using a novel metalorganic cobalt precursor.",
author = "Soonyoung Jung and Nandi, {Dip K.} and Seungmin Yeo and Hyungjun Kim and Yujin Jang and Bae, {Jong Seong} and Hong, {Tae Eun} and Kim, {Soo Hyun}",
year = "2018",
month = "3",
day = "15",
doi = "10.1016/j.surfcoat.2018.01.047",
language = "English",
volume = "337",
pages = "404--410",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",

}

Phase-controlled growth of cobalt oxide thin films by atomic layer deposition. / Jung, Soonyoung; Nandi, Dip K.; Yeo, Seungmin; Kim, Hyungjun; Jang, Yujin; Bae, Jong Seong; Hong, Tae Eun; Kim, Soo Hyun.

In: Surface and Coatings Technology, Vol. 337, 15.03.2018, p. 404-410.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase-controlled growth of cobalt oxide thin films by atomic layer deposition

AU - Jung, Soonyoung

AU - Nandi, Dip K.

AU - Yeo, Seungmin

AU - Kim, Hyungjun

AU - Jang, Yujin

AU - Bae, Jong Seong

AU - Hong, Tae Eun

AU - Kim, Soo Hyun

PY - 2018/3/15

Y1 - 2018/3/15

N2 - Cobalt oxide (CoO x ) thin films were deposited on thermally grown SiO 2 substrates by atomic layer deposition (ALD) using bis(1,4-di-iso-propyl-1,4-diazabutadiene)cobalt (C 16 H 32 N 4 Co) and oxygen (O 2 ) as reactants at deposition temperatures ranging from 125 to 300 °C. X-ray diffraction (XRD) and Raman spectroscopic analysis indicated that a mixed-phase oxide consisting of CoO and Co 3 O 4 was deposited at temperatures ranging from 125 to 250 °C. However, single-phase Co 3 O 4 was deposited above the deposition temperature of 275 °C. Further, analyses by Rutherford backscattering spectrometry, transmission electron microscopy, and selected area electron diffraction along with XRD and Raman spectroscopy revealed that the single-phase cobalt oxide film was stoichiometric crystalline (spinel structure) with negligible N and C impurities. The optical band gap of the single-phase Co 3 O 4 film was 1.98 eV and increased with decreasing deposition temperature. It was also shown that the mixed-phase cobalt oxide thin films could be converted into single-phase spinel Co 3 O 4 by annealing at 350 °C in O 2 ambient. It was further observed that the phase of the ALD-grown cobalt oxide thin film could be controlled by controlling the precursor or reactant pulsing condition. The study revealed that pure Co 3 O 4 phase could be grown at a relatively low temperature (250 °C) by using water vapor as a reactant. Therefore, this work systemically demonstrated several pathways to grow single-phase Co 3 O 4 by ALD using a novel metalorganic cobalt precursor.

AB - Cobalt oxide (CoO x ) thin films were deposited on thermally grown SiO 2 substrates by atomic layer deposition (ALD) using bis(1,4-di-iso-propyl-1,4-diazabutadiene)cobalt (C 16 H 32 N 4 Co) and oxygen (O 2 ) as reactants at deposition temperatures ranging from 125 to 300 °C. X-ray diffraction (XRD) and Raman spectroscopic analysis indicated that a mixed-phase oxide consisting of CoO and Co 3 O 4 was deposited at temperatures ranging from 125 to 250 °C. However, single-phase Co 3 O 4 was deposited above the deposition temperature of 275 °C. Further, analyses by Rutherford backscattering spectrometry, transmission electron microscopy, and selected area electron diffraction along with XRD and Raman spectroscopy revealed that the single-phase cobalt oxide film was stoichiometric crystalline (spinel structure) with negligible N and C impurities. The optical band gap of the single-phase Co 3 O 4 film was 1.98 eV and increased with decreasing deposition temperature. It was also shown that the mixed-phase cobalt oxide thin films could be converted into single-phase spinel Co 3 O 4 by annealing at 350 °C in O 2 ambient. It was further observed that the phase of the ALD-grown cobalt oxide thin film could be controlled by controlling the precursor or reactant pulsing condition. The study revealed that pure Co 3 O 4 phase could be grown at a relatively low temperature (250 °C) by using water vapor as a reactant. Therefore, this work systemically demonstrated several pathways to grow single-phase Co 3 O 4 by ALD using a novel metalorganic cobalt precursor.

UR - http://www.scopus.com/inward/record.url?scp=85041389846&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041389846&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2018.01.047

DO - 10.1016/j.surfcoat.2018.01.047

M3 - Article

AN - SCOPUS:85041389846

VL - 337

SP - 404

EP - 410

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -