Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor

Hyo Yeon Kim, Ji Hyeun Nam, Sheby Mary George, Jin Seong Park, Bo Keun Park, Gun Hwan Kim, Dong Ju Jeon, Taek Mo Chung, Jeong Hwan Han

Research output: Contribution to journalArticlepeer-review


Atomic layer deposition (ALD) of SnO and SnO2 thin films was successfully demonstrated over a wide temperature range of 70–300 °C using a divalent Sn-precursor, bis(N-ethoxy-2,2-dimethyl propanamido)tin (Sn(edpa)2). The regulated growth of the SnO2 and SnO films was realized by employing O2-plasma and H2O, respectively. Pure SnO2 and SnO films were deposited with negligible C and N contents at all the growth temperatures, and the films exhibited polycrystalline and amorphous structures, respectively. The SnO2 films presented a high transmittance of > 85% in the wavelength range of 400–700 nm and an indirect band gap of 3.6–4.0 eV; meanwhile, the SnO films exhibited a lower transmittance of > 60% and an indirect band gap of 2.9–3.0 eV. The SnO2 films exhibited n-type semiconducting characteristics with carrier concentrations of 8.5 × 1016–1.2 × 1020 cm−3 and Hall mobilities of 2–26 cm2/V s. By employing an alternate ALD growth of SnO and SnO2 films, SnO2/SnO multilayer structures were successfully fabricated at 120 °C. The in-situ quadrupole mass spectrometry analysis performed during ALD revealed that the oxidation of chemisorbed Sn-precursor occurs dominantly during the Sn(edpa)2/O2-plasma ALD process, resulting in the production of combustion by-products, whereas the Sn(edpa)2/H2O ALD process was governed by a ligand exchange reaction with the maintenance of the original oxidation state of Sn2+.

Original languageEnglish
Pages (from-to)5124-5132
Number of pages9
JournalCeramics International
Issue number4
Publication statusPublished - 2019 Mar

Bibliographical note

Funding Information:
This work was supported by Korea Research Institute of Chemical Technology ( SI1803 , Development of smart chemical materials for IoT device) and by the Research fund provided for a new professor by SeoulTech ( Seoul National University of Science and Technology ).

Publisher Copyright:
© 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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