Phase-controlled synthesis of SnO x thin films by atomic layer deposition and post-treatment

Bo Eun Park, Jaehong Park, Sangyoon Lee, Sanghun Lee, Woo Hee Kim, Hyungjun Kim

Research output: Contribution to journalArticle

Abstract

Tin oxide (SnO x ) is a promising oxide semiconductor due to the distinct properties of n-type SnO 2 and p-type SnO based on its stoichiometry. However, the stoichiometry control of SnO x remains challenging due to the thermodynamic instability of SnO. In the study, we focus on establishing the controllable stoichiometry of SnO x via atomic layer deposition (ALD) and subsequent treatment. The controllable synthesis of SnO 2 and SnO is investigated by multiple analyses involving the chemical composition, crystal structure, and band structure. The ALD SnO x is composed mostly of Sn 4+ –]O bonds with intrinsic oxygen vacancies and is transformed into crystalline SnO 2 phase via post-annealing. The refractive index (~1.8) and optical bandgap energy (~3.6 eV) of ALD SnO x correspond to those of SnO 2 . Post-deposition treatment with H 2 plasma enables the effective transformation of SnO 2 into SnO due to the easy penetration of H + ion into the film and de-bonding of Sn–]O via ion bombardment. The transformed SnO exhibits a significant amount of Sn 2+ –]O bonds with a refractive index of 2.8 and optical bandgap energy of ~2.9 eV. Specifically, the transformed SnO exhibits promise as an oxide semiconductor because it exhibits excellent stability with respect to re-oxidation into SnO 2 or further reduction into Sn metal. The present study advances practical applications that require a stable p-n junction through n-type SnO 2 and p-type SnO in various forms of device architectures.

Original languageEnglish
Pages (from-to)472-477
Number of pages6
JournalApplied Surface Science
Volume480
DOIs
Publication statusPublished - 2019 Jun 30

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Stoichiometry
stoichiometry
Optical band gaps
Thin films
Refractive index
n-p-n junctions
synthesis
thin films
refractivity
oxides
Oxygen vacancies
Ion bombardment
Tin oxides
Band structure
tin oxides
bombardment
chemical composition
ions

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Park, Bo Eun ; Park, Jaehong ; Lee, Sangyoon ; Lee, Sanghun ; Kim, Woo Hee ; Kim, Hyungjun. / Phase-controlled synthesis of SnO x thin films by atomic layer deposition and post-treatment In: Applied Surface Science. 2019 ; Vol. 480. pp. 472-477.
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abstract = "Tin oxide (SnO x ) is a promising oxide semiconductor due to the distinct properties of n-type SnO 2 and p-type SnO based on its stoichiometry. However, the stoichiometry control of SnO x remains challenging due to the thermodynamic instability of SnO. In the study, we focus on establishing the controllable stoichiometry of SnO x via atomic layer deposition (ALD) and subsequent treatment. The controllable synthesis of SnO 2 and SnO is investigated by multiple analyses involving the chemical composition, crystal structure, and band structure. The ALD SnO x is composed mostly of Sn 4+ –]O bonds with intrinsic oxygen vacancies and is transformed into crystalline SnO 2 phase via post-annealing. The refractive index (~1.8) and optical bandgap energy (~3.6 eV) of ALD SnO x correspond to those of SnO 2 . Post-deposition treatment with H 2 plasma enables the effective transformation of SnO 2 into SnO due to the easy penetration of H + ion into the film and de-bonding of Sn–]O via ion bombardment. The transformed SnO exhibits a significant amount of Sn 2+ –]O bonds with a refractive index of 2.8 and optical bandgap energy of ~2.9 eV. Specifically, the transformed SnO exhibits promise as an oxide semiconductor because it exhibits excellent stability with respect to re-oxidation into SnO 2 or further reduction into Sn metal. The present study advances practical applications that require a stable p-n junction through n-type SnO 2 and p-type SnO in various forms of device architectures.",
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Phase-controlled synthesis of SnO x thin films by atomic layer deposition and post-treatment . / Park, Bo Eun; Park, Jaehong; Lee, Sangyoon; Lee, Sanghun; Kim, Woo Hee; Kim, Hyungjun.

In: Applied Surface Science, Vol. 480, 30.06.2019, p. 472-477.

Research output: Contribution to journalArticle

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