Abstract
Tin oxide (SnO x ) is a promising oxide semiconductor due to the distinct properties of n-type SnO 2 and p-type SnO based on its stoichiometry. However, the stoichiometry control of SnO x remains challenging due to the thermodynamic instability of SnO. In the study, we focus on establishing the controllable stoichiometry of SnO x via atomic layer deposition (ALD) and subsequent treatment. The controllable synthesis of SnO 2 and SnO is investigated by multiple analyses involving the chemical composition, crystal structure, and band structure. The ALD SnO x is composed mostly of Sn 4+ –]O bonds with intrinsic oxygen vacancies and is transformed into crystalline SnO 2 phase via post-annealing. The refractive index (~1.8) and optical bandgap energy (~3.6 eV) of ALD SnO x correspond to those of SnO 2 . Post-deposition treatment with H 2 plasma enables the effective transformation of SnO 2 into SnO due to the easy penetration of H + ion into the film and de-bonding of Sn–]O via ion bombardment. The transformed SnO exhibits a significant amount of Sn 2+ –]O bonds with a refractive index of 2.8 and optical bandgap energy of ~2.9 eV. Specifically, the transformed SnO exhibits promise as an oxide semiconductor because it exhibits excellent stability with respect to re-oxidation into SnO 2 or further reduction into Sn metal. The present study advances practical applications that require a stable p-n junction through n-type SnO 2 and p-type SnO in various forms of device architectures.
| Original language | English |
|---|---|
| Pages (from-to) | 472-477 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 480 |
| DOIs | |
| Publication status | Published - 2019 Jun 30 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Phase-controlled synthesis of SnO x thin films by atomic layer deposition and post-treatment . / Park, Bo Eun; Park, Jaehong; Lee, Sangyoon; Lee, Sanghun; Kim, Woo Hee; Kim, Hyungjun.
In: Applied Surface Science, Vol. 480, 30.06.2019, p. 472-477.Research output: Contribution to journal › Article
TY - JOUR
T1 - Phase-controlled synthesis of SnO x thin films by atomic layer deposition and post-treatment
AU - Park, Bo Eun
AU - Park, Jaehong
AU - Lee, Sangyoon
AU - Lee, Sanghun
AU - Kim, Woo Hee
AU - Kim, Hyungjun
PY - 2019/6/30
Y1 - 2019/6/30
N2 - Tin oxide (SnO x ) is a promising oxide semiconductor due to the distinct properties of n-type SnO 2 and p-type SnO based on its stoichiometry. However, the stoichiometry control of SnO x remains challenging due to the thermodynamic instability of SnO. In the study, we focus on establishing the controllable stoichiometry of SnO x via atomic layer deposition (ALD) and subsequent treatment. The controllable synthesis of SnO 2 and SnO is investigated by multiple analyses involving the chemical composition, crystal structure, and band structure. The ALD SnO x is composed mostly of Sn 4+ –]O bonds with intrinsic oxygen vacancies and is transformed into crystalline SnO 2 phase via post-annealing. The refractive index (~1.8) and optical bandgap energy (~3.6 eV) of ALD SnO x correspond to those of SnO 2 . Post-deposition treatment with H 2 plasma enables the effective transformation of SnO 2 into SnO due to the easy penetration of H + ion into the film and de-bonding of Sn–]O via ion bombardment. The transformed SnO exhibits a significant amount of Sn 2+ –]O bonds with a refractive index of 2.8 and optical bandgap energy of ~2.9 eV. Specifically, the transformed SnO exhibits promise as an oxide semiconductor because it exhibits excellent stability with respect to re-oxidation into SnO 2 or further reduction into Sn metal. The present study advances practical applications that require a stable p-n junction through n-type SnO 2 and p-type SnO in various forms of device architectures.
AB - Tin oxide (SnO x ) is a promising oxide semiconductor due to the distinct properties of n-type SnO 2 and p-type SnO based on its stoichiometry. However, the stoichiometry control of SnO x remains challenging due to the thermodynamic instability of SnO. In the study, we focus on establishing the controllable stoichiometry of SnO x via atomic layer deposition (ALD) and subsequent treatment. The controllable synthesis of SnO 2 and SnO is investigated by multiple analyses involving the chemical composition, crystal structure, and band structure. The ALD SnO x is composed mostly of Sn 4+ –]O bonds with intrinsic oxygen vacancies and is transformed into crystalline SnO 2 phase via post-annealing. The refractive index (~1.8) and optical bandgap energy (~3.6 eV) of ALD SnO x correspond to those of SnO 2 . Post-deposition treatment with H 2 plasma enables the effective transformation of SnO 2 into SnO due to the easy penetration of H + ion into the film and de-bonding of Sn–]O via ion bombardment. The transformed SnO exhibits a significant amount of Sn 2+ –]O bonds with a refractive index of 2.8 and optical bandgap energy of ~2.9 eV. Specifically, the transformed SnO exhibits promise as an oxide semiconductor because it exhibits excellent stability with respect to re-oxidation into SnO 2 or further reduction into Sn metal. The present study advances practical applications that require a stable p-n junction through n-type SnO 2 and p-type SnO in various forms of device architectures.
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U2 - 10.1016/j.apsusc.2019.03.013
DO - 10.1016/j.apsusc.2019.03.013
M3 - Article
AN - SCOPUS:85062388371
VL - 480
SP - 472
EP - 477
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -