Phase-dependent thermal conductivity of Ge1 Sb4 Te7 and N: Ge1 Sb4 Te7 for phase change memory applications

Sangwoo Shin, Hyung Keun Kim, Jiwoon Song, Doo Jin Choi, Hyung Hee Cho

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report the thermal conductivities of Ge1 Sb4 Te7 and nitrogen-doped Ge1 Sb4 Te7 thin films at temperatures ranging from 300 to 520 K using the 3ω method. Thermal conductivity of Ge1 Sb4 Te7 increases abruptly during the transition from the amorphous to crystalline phase. Nitrogen doping effectively suppresses the crystallization process, resulting reduction of lattice as well as electronic thermal conductivity. These behaviors are confirmed by x-ray diffraction, sheet conductance, and thermal conductivity measurements. Numerical modeling of phase change memory device shows that with nitrogen doping, performance increase in terms of lower reset current and faster reset time can be achieved.

Original languageEnglish
Article number033518
JournalJournal of Applied Physics
Volume107
Issue number3
DOIs
Publication statusPublished - 2010 Feb 24

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thermal conductivity
nitrogen
x ray diffraction
crystallization
thin films
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "We report the thermal conductivities of Ge1 Sb4 Te7 and nitrogen-doped Ge1 Sb4 Te7 thin films at temperatures ranging from 300 to 520 K using the 3ω method. Thermal conductivity of Ge1 Sb4 Te7 increases abruptly during the transition from the amorphous to crystalline phase. Nitrogen doping effectively suppresses the crystallization process, resulting reduction of lattice as well as electronic thermal conductivity. These behaviors are confirmed by x-ray diffraction, sheet conductance, and thermal conductivity measurements. Numerical modeling of phase change memory device shows that with nitrogen doping, performance increase in terms of lower reset current and faster reset time can be achieved.",
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Phase-dependent thermal conductivity of Ge1 Sb4 Te7 and N : Ge1 Sb4 Te7 for phase change memory applications. / Shin, Sangwoo; Kim, Hyung Keun; Song, Jiwoon; Choi, Doo Jin; Cho, Hyung Hee.

In: Journal of Applied Physics, Vol. 107, No. 3, 033518, 24.02.2010.

Research output: Contribution to journalArticle

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