Phase evolution and grain-boundary contributions in CaCu 3-xZn xTi 4O 12

Oh Hyeon Kwon, Byeong Kon Kim, Yeon Hwa Jo, Paul Gouri Sankar, Yul Gyo Jung, Tae Sung Jung, Jung Won Lee, Yong Soo Cho

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Abstract

Extensive substitutions of Zn in Ca(Cu 1-xZn x) 3Ti 4O 12 (x = 0, 0. 1, 0. 5, 1. 0 and 2. 0) dielectrics are investigated in terms of the phase evolution, dielectric properties and grain boundary resistivity. The composition of CaCu 2. 9Zn 0. 1Ti 4O 12 (x = 0. 1) densified at a relatively low sintering temperature of 1000°C showed a k value of approximately 7,000 and a tanδ value of approximately 0. 07 at 10 kHz, which is better than the values for pure CaCu 3Ti 4O 12 (CCTO). The improved dielectric properties are also believed to be related to the lower grain boundary resistivity of ~1676 kΩ. cm, as obtained from a Cole-Cole plot. Beyond this level of Zn, the degradation of the dielectric constant was associated with unexpected crystalline phases, in this case Ca 2Zn 4Ti 16O 38, CaTiO 3, and Zn 2TiO 4, which were observed as the level of Zn increased. Although the degradation does not match that of pure CCTO, an addition of Zn up to x=1. 0 can hold the dielectric constant at the level of a few thousands, which is still promising compared to other high-k dielectric materials that must be densified below -1000°C to meet the subsequent microcircuit requirements.

Original languageEnglish
Pages (from-to)337-341
Number of pages5
JournalElectronic Materials Letters
Volume7
Issue number4
DOIs
Publication statusPublished - 2011 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Kwon, O. H., Kim, B. K., Jo, Y. H., Sankar, P. G., Jung, Y. G., Jung, T. S., Lee, J. W., & Cho, Y. S. (2011). Phase evolution and grain-boundary contributions in CaCu 3-xZn xTi 4O 12 Electronic Materials Letters, 7(4), 337-341. https://doi.org/10.1007/s13391-011-0500-5