Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures

Young Kuk Kim, S. A. Park, J. H. Baeck, M. K. Noh, KwangHo Jeong, Mann-Ho Cho, H. M. Park, M. K. Lee, E. J. Jeong, Dae Hong Ko, H. J. Shin

Research output: Contribution to journalArticle

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Abstract

Changes in the structural and electrical properties of a Ge2 Sb2 Te5 alloy thin film induced by phase transition were investigated using various analytical techniques. X-ray diffraction and scanning photoelectron microscopy showed that the phase separation occurred in a local area of the film during a phase transition when the amorphous structure was being transformed into crystalline structures. It was found that the heterogeneous distribution of Sb atoms that diffused during the phase transition accompanied the phase separation. Atomic force microscopy was used to examine the changes in surface morphology and roughness. The electrical conductance of the film was dramatically improved after the phase transition from an amorphous structure to crystalline structures as evidenced by the sheet resistance measurements. The sheet resistance changed from ∼ 109 to ∼ 102 sq. during the phase transition. Differential scanning calorimetry was used to determine the exact phase transition temperature (160-170 °C) and the effective activation energy for the phase transition (2.5±0.11 eV) on the basis of Kissinger's equation.

Original languageEnglish
Article number079604JVA
Pages (from-to)929-933
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number4
DOIs
Publication statusPublished - 2006 Jul 1

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Phase separation
Phase transitions
Crystalline materials
Sheet resistance
scanning
Photoelectrons
photoelectrons
roughness
heat measurement
Superconducting transition temperature
Surface morphology
transition temperature
electrical properties
Structural properties
Differential scanning calorimetry
Atomic force microscopy
atomic force microscopy
Microscopic examination
Electric properties
activation energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Kim, Young Kuk ; Park, S. A. ; Baeck, J. H. ; Noh, M. K. ; Jeong, KwangHo ; Cho, Mann-Ho ; Park, H. M. ; Lee, M. K. ; Jeong, E. J. ; Ko, Dae Hong ; Shin, H. J. / Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2006 ; Vol. 24, No. 4. pp. 929-933.
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Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures. / Kim, Young Kuk; Park, S. A.; Baeck, J. H.; Noh, M. K.; Jeong, KwangHo; Cho, Mann-Ho; Park, H. M.; Lee, M. K.; Jeong, E. J.; Ko, Dae Hong; Shin, H. J.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 24, No. 4, 079604JVA, 01.07.2006, p. 929-933.

Research output: Contribution to journalArticle

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AU - Kim, Young Kuk

AU - Park, S. A.

AU - Baeck, J. H.

AU - Noh, M. K.

AU - Jeong, KwangHo

AU - Cho, Mann-Ho

AU - Park, H. M.

AU - Lee, M. K.

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AU - Ko, Dae Hong

AU - Shin, H. J.

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AB - Changes in the structural and electrical properties of a Ge2 Sb2 Te5 alloy thin film induced by phase transition were investigated using various analytical techniques. X-ray diffraction and scanning photoelectron microscopy showed that the phase separation occurred in a local area of the film during a phase transition when the amorphous structure was being transformed into crystalline structures. It was found that the heterogeneous distribution of Sb atoms that diffused during the phase transition accompanied the phase separation. Atomic force microscopy was used to examine the changes in surface morphology and roughness. The electrical conductance of the film was dramatically improved after the phase transition from an amorphous structure to crystalline structures as evidenced by the sheet resistance measurements. The sheet resistance changed from ∼ 109 to ∼ 102 sq. during the phase transition. Differential scanning calorimetry was used to determine the exact phase transition temperature (160-170 °C) and the effective activation energy for the phase transition (2.5±0.11 eV) on the basis of Kissinger's equation.

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