Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures

Young Kuk Kim, S. A. Park, J. H. Baeck, M. K. Noh, K. Jeong, M. H. Cho, H. M. Park, M. K. Lee, E. J. Jeong, D. H. Ko, H. J. Shin

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Changes in the structural and electrical properties of a Ge2 Sb2 Te5 alloy thin film induced by phase transition were investigated using various analytical techniques. X-ray diffraction and scanning photoelectron microscopy showed that the phase separation occurred in a local area of the film during a phase transition when the amorphous structure was being transformed into crystalline structures. It was found that the heterogeneous distribution of Sb atoms that diffused during the phase transition accompanied the phase separation. Atomic force microscopy was used to examine the changes in surface morphology and roughness. The electrical conductance of the film was dramatically improved after the phase transition from an amorphous structure to crystalline structures as evidenced by the sheet resistance measurements. The sheet resistance changed from ∼ 109 to ∼ 102 sq. during the phase transition. Differential scanning calorimetry was used to determine the exact phase transition temperature (160-170 °C) and the effective activation energy for the phase transition (2.5±0.11 eV) on the basis of Kissinger's equation.

Original languageEnglish
Article number079604JVA
Pages (from-to)929-933
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 2006 Jul

Bibliographical note

Funding Information:
This research was partially supported by “The national research program for the 0.1 Terabit Non-volatile Memory Development sponsored by Korea Ministry of Science & Technology.”

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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