Phase separation of Ni germanide formed on a Ge-on-Si structure for Ge MOSFETs

Ying Ying Zhang, Jungwoo Oh, Tae Sung Bae, Zhun Zhong, Shi Guang Li, Soon Yen Jung, Kee Young Park, Ga Won Lee, Jin Suk Wang, Prashant Majhi, Byoung Hun Lee, Hsing Huang Tseng, Yoon Ha Jeong, Hi Deok Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Phase separation of Ni germanide due to the penetration of Ni atoms from Ni germanide in the Ge layer into the bottom Si substrate is reported. The orthorhombic-structure Ni germanide is formed in a Ge-on-Si substrate, which is promising for high-performance Ge p-channel metal-oxide-semiconductor field effect transistor (PMOSFETs). However, the Ni penetration and resulting Ni-rich Ni silicide formation happens when the Ni germanide becomes thick enough to touch the bottom Si substrate. The phase separation or Ni penetration observed in this work is believed to be due to the lower heat of formation of NiSi than NiGe. The Ni penetration must be controlled in fabricating source/drain regions for high-mobility Ge-on-Si MOSFETs.

Original languageEnglish
Pages (from-to)H1-H3
JournalElectrochemical and Solid-State Letters
Volume11
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Zhang, Y. Y., Oh, J., Bae, T. S., Zhong, Z., Li, S. G., Jung, S. Y., Park, K. Y., Lee, G. W., Wang, J. S., Majhi, P., Lee, B. H., Tseng, H. H., Jeong, Y. H., & Lee, H. D. (2008). Phase separation of Ni germanide formed on a Ge-on-Si structure for Ge MOSFETs. Electrochemical and Solid-State Letters, 11(1), H1-H3. https://doi.org/10.1149/1.2795836