Abstract
Phase separation of Ni germanide due to the penetration of Ni atoms from Ni germanide in the Ge layer into the bottom Si substrate is reported. The orthorhombic-structure Ni germanide is formed in a Ge-on-Si substrate, which is promising for high-performance Ge p-channel metal-oxide-semiconductor field effect transistor (PMOSFETs). However, the Ni penetration and resulting Ni-rich Ni silicide formation happens when the Ni germanide becomes thick enough to touch the bottom Si substrate. The phase separation or Ni penetration observed in this work is believed to be due to the lower heat of formation of NiSi than NiGe. The Ni penetration must be controlled in fabricating source/drain regions for high-mobility Ge-on-Si MOSFETs.
| Original language | English |
|---|---|
| Journal | Electrochemical and Solid-State Letters |
| Volume | 11 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering
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Phase separation of Ni germanide formed on a Ge-on-Si structure for Ge MOSFETs. / Zhang, Ying Ying; Oh, Jungwoo; Bae, Tae Sung; Zhong, Zhun; Li, Shi Guang; Jung, Soon Yen; Park, Kee Young; Lee, Ga Won; Wang, Jin Suk; Majhi, Prashant; Lee, Byoung Hun; Tseng, Hsing Huang; Jeong, Yoon Ha; Lee, Hi Deok.
In: Electrochemical and Solid-State Letters, Vol. 11, No. 1, 01.01.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Phase separation of Ni germanide formed on a Ge-on-Si structure for Ge MOSFETs
AU - Zhang, Ying Ying
AU - Oh, Jungwoo
AU - Bae, Tae Sung
AU - Zhong, Zhun
AU - Li, Shi Guang
AU - Jung, Soon Yen
AU - Park, Kee Young
AU - Lee, Ga Won
AU - Wang, Jin Suk
AU - Majhi, Prashant
AU - Lee, Byoung Hun
AU - Tseng, Hsing Huang
AU - Jeong, Yoon Ha
AU - Lee, Hi Deok
PY - 2008/1/1
Y1 - 2008/1/1
N2 - Phase separation of Ni germanide due to the penetration of Ni atoms from Ni germanide in the Ge layer into the bottom Si substrate is reported. The orthorhombic-structure Ni germanide is formed in a Ge-on-Si substrate, which is promising for high-performance Ge p-channel metal-oxide-semiconductor field effect transistor (PMOSFETs). However, the Ni penetration and resulting Ni-rich Ni silicide formation happens when the Ni germanide becomes thick enough to touch the bottom Si substrate. The phase separation or Ni penetration observed in this work is believed to be due to the lower heat of formation of NiSi than NiGe. The Ni penetration must be controlled in fabricating source/drain regions for high-mobility Ge-on-Si MOSFETs.
AB - Phase separation of Ni germanide due to the penetration of Ni atoms from Ni germanide in the Ge layer into the bottom Si substrate is reported. The orthorhombic-structure Ni germanide is formed in a Ge-on-Si substrate, which is promising for high-performance Ge p-channel metal-oxide-semiconductor field effect transistor (PMOSFETs). However, the Ni penetration and resulting Ni-rich Ni silicide formation happens when the Ni germanide becomes thick enough to touch the bottom Si substrate. The phase separation or Ni penetration observed in this work is believed to be due to the lower heat of formation of NiSi than NiGe. The Ni penetration must be controlled in fabricating source/drain regions for high-mobility Ge-on-Si MOSFETs.
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U2 - 10.1149/1.2795836
DO - 10.1149/1.2795836
M3 - Article
VL - 11
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 1
ER -