Phase transformation and morphological evolution of ion-beam sputtered tin oxide films on silicon substrate

Yong Sahm Choe, Jae Ho Chung, Dae Seung Kim, Gyeung Ho Kim, Hong Koo Baik

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Amorphous tin oxide films were deposited on a silicon substrate by ion-beam sputtering (IBS) using a SnO2 target. Phase transformation and morphological changes of deposited films at different annealing temperatures were studied by X-ray diffraction and scanning electron microscopy. Crystallization of the as-deposited film started at 350°C and SnO and SnO2 phases formed at 400°C. Disproportionation of SnO into Sn and SnO2 was observed at 450°C followed by the oxidation of metallic tin at 550°C. Large volume changes accompanying the oxidation of metallic tin at this temperature caused the partial detachment and formation of heavy wrinkles on the film. These results suggest that the oxygen deficiency of tin oxide films should be avoided by optimizing the deposition process, since a drastic morphological change at the phase transformation to SnO2 during annealing may destroy the integrity of the thin films and degrade the long-term stability of tin oxide films used as gas sensors at high temperatures.

Original languageEnglish
Pages (from-to)1473-1479
Number of pages7
JournalMaterials Research Bulletin
Volume34
Issue number9
DOIs
Publication statusPublished - 1999 Jul 1

Fingerprint

Silicon
Tin oxides
Ion beams
tin oxides
Oxide films
phase transformations
oxide films
Tin
Phase transitions
ion beams
tin
silicon
Substrates
Annealing
Oxidation
oxidation
annealing
hypoxia
Crystallization
Chemical sensors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Choe, Yong Sahm ; Chung, Jae Ho ; Kim, Dae Seung ; Kim, Gyeung Ho ; Baik, Hong Koo. / Phase transformation and morphological evolution of ion-beam sputtered tin oxide films on silicon substrate. In: Materials Research Bulletin. 1999 ; Vol. 34, No. 9. pp. 1473-1479.
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Phase transformation and morphological evolution of ion-beam sputtered tin oxide films on silicon substrate. / Choe, Yong Sahm; Chung, Jae Ho; Kim, Dae Seung; Kim, Gyeung Ho; Baik, Hong Koo.

In: Materials Research Bulletin, Vol. 34, No. 9, 01.07.1999, p. 1473-1479.

Research output: Contribution to journalArticle

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T1 - Phase transformation and morphological evolution of ion-beam sputtered tin oxide films on silicon substrate

AU - Choe, Yong Sahm

AU - Chung, Jae Ho

AU - Kim, Dae Seung

AU - Kim, Gyeung Ho

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PY - 1999/7/1

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AB - Amorphous tin oxide films were deposited on a silicon substrate by ion-beam sputtering (IBS) using a SnO2 target. Phase transformation and morphological changes of deposited films at different annealing temperatures were studied by X-ray diffraction and scanning electron microscopy. Crystallization of the as-deposited film started at 350°C and SnO and SnO2 phases formed at 400°C. Disproportionation of SnO into Sn and SnO2 was observed at 450°C followed by the oxidation of metallic tin at 550°C. Large volume changes accompanying the oxidation of metallic tin at this temperature caused the partial detachment and formation of heavy wrinkles on the film. These results suggest that the oxygen deficiency of tin oxide films should be avoided by optimizing the deposition process, since a drastic morphological change at the phase transformation to SnO2 during annealing may destroy the integrity of the thin films and degrade the long-term stability of tin oxide films used as gas sensors at high temperatures.

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