Phase transformation behavior of N-doped Ge2 Sb2+x Te5 thin films (x=0, 0.2) for phase change memory

Research output: Contribution to journalArticle

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Abstract

Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were deposited by dc magnetron sputtering on Si O2 Si (100) substrates and the effects of antimony (Sb) and nitrogen (N) doping on microstructure and sheet resistance were investigated. After annealing at various temperatures between 100 and 400°C, phase transformations in Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The sheet resistance of those samples was measured by four-point probe. XRD and plan-view TEM analysis showed that the addition of Sb and N elements to pseudo-binary Ge2 Sb2 Te5 caused crystallization and phase transformation from face-centered cubic (fcc) structure to hexagonal close-packed (hcp) structure to occur at higher temperatures with grain refinement. Also, the Sb and N doping produces increased sheet resistance in Ge2 Sb2.2 Te5 films with improved phase stability of amorphous and fcc structures up to higher temperatures. N-doped Ge2 Sb2.2 Te5 with high sheet resistance is favored for phase-change random access memory application because of reduced writing current with increased crystallization speed and thermal stability.

Original languageEnglish
Pages (from-to)H867-H870
JournalJournal of the Electrochemical Society
Volume154
Issue number10
DOIs
Publication statusPublished - 2007 Aug 31

Fingerprint

Phase change memory
Sheet resistance
phase transformations
Phase transitions
Thin films
Nitrogen
thin films
Crystallization
nitrogen
Doping (additives)
crystallization
Transmission electron microscopy
Antimony
X ray diffraction
transmission electron microscopy
Phase stability
Grain refinement
random access memory
antimony
diffraction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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title = "Phase transformation behavior of N-doped Ge2 Sb2+x Te5 thin films (x=0, 0.2) for phase change memory",
abstract = "Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were deposited by dc magnetron sputtering on Si O2 Si (100) substrates and the effects of antimony (Sb) and nitrogen (N) doping on microstructure and sheet resistance were investigated. After annealing at various temperatures between 100 and 400°C, phase transformations in Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The sheet resistance of those samples was measured by four-point probe. XRD and plan-view TEM analysis showed that the addition of Sb and N elements to pseudo-binary Ge2 Sb2 Te5 caused crystallization and phase transformation from face-centered cubic (fcc) structure to hexagonal close-packed (hcp) structure to occur at higher temperatures with grain refinement. Also, the Sb and N doping produces increased sheet resistance in Ge2 Sb2.2 Te5 films with improved phase stability of amorphous and fcc structures up to higher temperatures. N-doped Ge2 Sb2.2 Te5 with high sheet resistance is favored for phase-change random access memory application because of reduced writing current with increased crystallization speed and thermal stability.",
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Phase transformation behavior of N-doped Ge2 Sb2+x Te5 thin films (x=0, 0.2) for phase change memory. / Do, Kihoon; Sohn, Hyunchul; Ko, Dae Hong.

In: Journal of the Electrochemical Society, Vol. 154, No. 10, 31.08.2007, p. H867-H870.

Research output: Contribution to journalArticle

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AU - Do, Kihoon

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N2 - Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were deposited by dc magnetron sputtering on Si O2 Si (100) substrates and the effects of antimony (Sb) and nitrogen (N) doping on microstructure and sheet resistance were investigated. After annealing at various temperatures between 100 and 400°C, phase transformations in Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The sheet resistance of those samples was measured by four-point probe. XRD and plan-view TEM analysis showed that the addition of Sb and N elements to pseudo-binary Ge2 Sb2 Te5 caused crystallization and phase transformation from face-centered cubic (fcc) structure to hexagonal close-packed (hcp) structure to occur at higher temperatures with grain refinement. Also, the Sb and N doping produces increased sheet resistance in Ge2 Sb2.2 Te5 films with improved phase stability of amorphous and fcc structures up to higher temperatures. N-doped Ge2 Sb2.2 Te5 with high sheet resistance is favored for phase-change random access memory application because of reduced writing current with increased crystallization speed and thermal stability.

AB - Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were deposited by dc magnetron sputtering on Si O2 Si (100) substrates and the effects of antimony (Sb) and nitrogen (N) doping on microstructure and sheet resistance were investigated. After annealing at various temperatures between 100 and 400°C, phase transformations in Ge2 Sb2 Te5 and nitrogen-doped Ge2 Sb2.2 Te5 films were investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The sheet resistance of those samples was measured by four-point probe. XRD and plan-view TEM analysis showed that the addition of Sb and N elements to pseudo-binary Ge2 Sb2 Te5 caused crystallization and phase transformation from face-centered cubic (fcc) structure to hexagonal close-packed (hcp) structure to occur at higher temperatures with grain refinement. Also, the Sb and N doping produces increased sheet resistance in Ge2 Sb2.2 Te5 films with improved phase stability of amorphous and fcc structures up to higher temperatures. N-doped Ge2 Sb2.2 Te5 with high sheet resistance is favored for phase-change random access memory application because of reduced writing current with increased crystallization speed and thermal stability.

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