Phase transformation of alternately layered Bi/Se structures to well-ordered single crystalline Bi 2Se 3 structures by a self-organized ordering process

Tae Hyeon Kim, Ju Heyuck Baeck, Hyejin Choi, KwangHo Jeong, Mann-Ho Cho, B. C. Kim, K. T. Jeong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Multilayer films composed of alternating layers of Bi and Se-[Bi(4.55 Å)/Se(6.82 Å)] n (Bi4Se6), [Bi(6.13 Å)/Se(12.26) Å] n (Bi6Se12), and [Bi(4.86 Å)/Se(18.46 Å)] n (Bi4Se18)-were fabricated by controlling the layer thickness at the atomic scale using thermal evaporation techniques. After annealing treatment, the Bi4Se18 alternately layered film shows a single phase of Bi 2Se 3 rhombohedral crystalline structure with the characteristic density of single crystal Bi 2Se 3, whereas the Bi6Se12 and Bi4Se6 films show locally disordered Bi 2Se 3 crystalline structure. The effectively controlled layered structure in the as-grown Bi4Se18 film enhances the Bi-Se chemical bonding state. The formation of a layered crystalline structure during the annealing process increased as the thickness of Se increased. After interdiffusion and the crystallization process, alternately layered Bi4Se18 films become stable Bi 2Se 3 single crystals with a continuous and uniform layered structure. Finally, in the Bi-Se system, atomically controlled multilayers with an optimized ratio of each unit layer can be transformed to a perfect single-crystalline structure on oxidized Si with an amorphous phase through a self-organized ordering process.

Original languageEnglish
Pages (from-to)3737-3746
Number of pages10
JournalJournal of Physical Chemistry C
Volume116
Issue number5
DOIs
Publication statusPublished - 2012 Feb 9

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phase transformations
Phase transitions
Crystalline materials
Single crystals
Annealing
Thermal evaporation
Multilayer films
Crystallization
annealing
single crystals
Multilayers
evaporation
crystallization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

@article{91c6e9eaa2394fb0994c1b09d7cc55e0,
title = "Phase transformation of alternately layered Bi/Se structures to well-ordered single crystalline Bi 2Se 3 structures by a self-organized ordering process",
abstract = "Multilayer films composed of alternating layers of Bi and Se-[Bi(4.55 {\AA})/Se(6.82 {\AA})] n (Bi4Se6), [Bi(6.13 {\AA})/Se(12.26) {\AA}] n (Bi6Se12), and [Bi(4.86 {\AA})/Se(18.46 {\AA})] n (Bi4Se18)-were fabricated by controlling the layer thickness at the atomic scale using thermal evaporation techniques. After annealing treatment, the Bi4Se18 alternately layered film shows a single phase of Bi 2Se 3 rhombohedral crystalline structure with the characteristic density of single crystal Bi 2Se 3, whereas the Bi6Se12 and Bi4Se6 films show locally disordered Bi 2Se 3 crystalline structure. The effectively controlled layered structure in the as-grown Bi4Se18 film enhances the Bi-Se chemical bonding state. The formation of a layered crystalline structure during the annealing process increased as the thickness of Se increased. After interdiffusion and the crystallization process, alternately layered Bi4Se18 films become stable Bi 2Se 3 single crystals with a continuous and uniform layered structure. Finally, in the Bi-Se system, atomically controlled multilayers with an optimized ratio of each unit layer can be transformed to a perfect single-crystalline structure on oxidized Si with an amorphous phase through a self-organized ordering process.",
author = "Kim, {Tae Hyeon} and Baeck, {Ju Heyuck} and Hyejin Choi and KwangHo Jeong and Mann-Ho Cho and Kim, {B. C.} and Jeong, {K. T.}",
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Phase transformation of alternately layered Bi/Se structures to well-ordered single crystalline Bi 2Se 3 structures by a self-organized ordering process. / Kim, Tae Hyeon; Baeck, Ju Heyuck; Choi, Hyejin; Jeong, KwangHo; Cho, Mann-Ho; Kim, B. C.; Jeong, K. T.

In: Journal of Physical Chemistry C, Vol. 116, No. 5, 09.02.2012, p. 3737-3746.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase transformation of alternately layered Bi/Se structures to well-ordered single crystalline Bi 2Se 3 structures by a self-organized ordering process

AU - Kim, Tae Hyeon

AU - Baeck, Ju Heyuck

AU - Choi, Hyejin

AU - Jeong, KwangHo

AU - Cho, Mann-Ho

AU - Kim, B. C.

AU - Jeong, K. T.

PY - 2012/2/9

Y1 - 2012/2/9

N2 - Multilayer films composed of alternating layers of Bi and Se-[Bi(4.55 Å)/Se(6.82 Å)] n (Bi4Se6), [Bi(6.13 Å)/Se(12.26) Å] n (Bi6Se12), and [Bi(4.86 Å)/Se(18.46 Å)] n (Bi4Se18)-were fabricated by controlling the layer thickness at the atomic scale using thermal evaporation techniques. After annealing treatment, the Bi4Se18 alternately layered film shows a single phase of Bi 2Se 3 rhombohedral crystalline structure with the characteristic density of single crystal Bi 2Se 3, whereas the Bi6Se12 and Bi4Se6 films show locally disordered Bi 2Se 3 crystalline structure. The effectively controlled layered structure in the as-grown Bi4Se18 film enhances the Bi-Se chemical bonding state. The formation of a layered crystalline structure during the annealing process increased as the thickness of Se increased. After interdiffusion and the crystallization process, alternately layered Bi4Se18 films become stable Bi 2Se 3 single crystals with a continuous and uniform layered structure. Finally, in the Bi-Se system, atomically controlled multilayers with an optimized ratio of each unit layer can be transformed to a perfect single-crystalline structure on oxidized Si with an amorphous phase through a self-organized ordering process.

AB - Multilayer films composed of alternating layers of Bi and Se-[Bi(4.55 Å)/Se(6.82 Å)] n (Bi4Se6), [Bi(6.13 Å)/Se(12.26) Å] n (Bi6Se12), and [Bi(4.86 Å)/Se(18.46 Å)] n (Bi4Se18)-were fabricated by controlling the layer thickness at the atomic scale using thermal evaporation techniques. After annealing treatment, the Bi4Se18 alternately layered film shows a single phase of Bi 2Se 3 rhombohedral crystalline structure with the characteristic density of single crystal Bi 2Se 3, whereas the Bi6Se12 and Bi4Se6 films show locally disordered Bi 2Se 3 crystalline structure. The effectively controlled layered structure in the as-grown Bi4Se18 film enhances the Bi-Se chemical bonding state. The formation of a layered crystalline structure during the annealing process increased as the thickness of Se increased. After interdiffusion and the crystallization process, alternately layered Bi4Se18 films become stable Bi 2Se 3 single crystals with a continuous and uniform layered structure. Finally, in the Bi-Se system, atomically controlled multilayers with an optimized ratio of each unit layer can be transformed to a perfect single-crystalline structure on oxidized Si with an amorphous phase through a self-organized ordering process.

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