Phase transformation of alternately layered Bi/Se structures to well-ordered single crystalline Bi 2Se 3 structures by a self-organized ordering process

Tae Hyeon Kim, Ju Heyuck Baeck, Hyejin Choi, Kwang Ho Jeong, Mann Ho Cho, B. C. Kim, K. T. Jeong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Multilayer films composed of alternating layers of Bi and Se-[Bi(4.55 Å)/Se(6.82 Å)] n (Bi4Se6), [Bi(6.13 Å)/Se(12.26) Å] n (Bi6Se12), and [Bi(4.86 Å)/Se(18.46 Å)] n (Bi4Se18)-were fabricated by controlling the layer thickness at the atomic scale using thermal evaporation techniques. After annealing treatment, the Bi4Se18 alternately layered film shows a single phase of Bi 2Se 3 rhombohedral crystalline structure with the characteristic density of single crystal Bi 2Se 3, whereas the Bi6Se12 and Bi4Se6 films show locally disordered Bi 2Se 3 crystalline structure. The effectively controlled layered structure in the as-grown Bi4Se18 film enhances the Bi-Se chemical bonding state. The formation of a layered crystalline structure during the annealing process increased as the thickness of Se increased. After interdiffusion and the crystallization process, alternately layered Bi4Se18 films become stable Bi 2Se 3 single crystals with a continuous and uniform layered structure. Finally, in the Bi-Se system, atomically controlled multilayers with an optimized ratio of each unit layer can be transformed to a perfect single-crystalline structure on oxidized Si with an amorphous phase through a self-organized ordering process.

Original languageEnglish
Pages (from-to)3737-3746
Number of pages10
JournalJournal of Physical Chemistry C
Volume116
Issue number5
DOIs
Publication statusPublished - 2012 Feb 9

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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