Phase transformation through metastable structures in atomically controlled Se/Sb Multilayers

Ju Heyuck Baeck, Tae Hyeon Kim, Hye Jin Choi, Kwang Ho Jeong, Mann Ho Cho

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Multilayer films composed of individual layers of [Sb(8.84 Å)/Se(12.6 Å)](Sb4Se6), [Sb(8.84 Å)/Se(7.2 Å)]- (Sb4Se4), and [Sb(15.4 Å)/Se(7.2 Å)](Sb6Se4) were synthesized using effusion cells controlled at the subatomic scale. After an annealing process, the Sb4Se6 multilayered film with an Sb2Se3 orthorhombic structure had a high resistance and a clean valence band edge similar to that for a band shape of a semiconductor, whereas the Sb6Se4 film with an Sb rhombohedral structure and an Sb2Se3 orthorhombic structure had a low resistance and a band tail that originated from their metallic characteristics in the near Fermi level. In the case of Sb4Se4, a metastable Sb 4Se4 monoclinic structure was induced at an annealing temperature of 200 °C because of the unstable, local, and anisotropic distribution of each element in the vertical direction of multilayer films with a specific stoichiometry. Moreover, the nonbonding states originating from a band-gap state were generated in the film with a metastable structure. When the annealing process was conducted at 256 °C, the linear diffusion of elements in the film induced the most stable crystal structure with a stable stoichiometry. That is, the multilayered Sb4Se4 film underwent a steplike resistance change through a two-level phase change process. The findings indicate that a multilayered system with an atomically controlled thickness can be utilized to control the electrical resistance, metastable phase formation, and the valence band structure in an Sb-Se alloy system.

Original languageEnglish
Pages (from-to)13462-13470
Number of pages9
JournalJournal of Physical Chemistry C
Volume115
Issue number27
DOIs
Publication statusPublished - 2011 Jul 14

Fingerprint

phase transformations
Multilayers
Phase transitions
Multilayer films
Annealing
Valence bands
Stoichiometry
annealing
stoichiometry
Acoustic impedance
Metastable phases
Fermi level
valence
Band structure
Energy gap
low resistance
high resistance
Crystal structure
electrical resistance
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

@article{a672f6ae0d324a1bb7a805ee0a1df24b,
title = "Phase transformation through metastable structures in atomically controlled Se/Sb Multilayers",
abstract = "Multilayer films composed of individual layers of [Sb(8.84 {\AA})/Se(12.6 {\AA})](Sb4Se6), [Sb(8.84 {\AA})/Se(7.2 {\AA})]- (Sb4Se4), and [Sb(15.4 {\AA})/Se(7.2 {\AA})](Sb6Se4) were synthesized using effusion cells controlled at the subatomic scale. After an annealing process, the Sb4Se6 multilayered film with an Sb2Se3 orthorhombic structure had a high resistance and a clean valence band edge similar to that for a band shape of a semiconductor, whereas the Sb6Se4 film with an Sb rhombohedral structure and an Sb2Se3 orthorhombic structure had a low resistance and a band tail that originated from their metallic characteristics in the near Fermi level. In the case of Sb4Se4, a metastable Sb 4Se4 monoclinic structure was induced at an annealing temperature of 200 °C because of the unstable, local, and anisotropic distribution of each element in the vertical direction of multilayer films with a specific stoichiometry. Moreover, the nonbonding states originating from a band-gap state were generated in the film with a metastable structure. When the annealing process was conducted at 256 °C, the linear diffusion of elements in the film induced the most stable crystal structure with a stable stoichiometry. That is, the multilayered Sb4Se4 film underwent a steplike resistance change through a two-level phase change process. The findings indicate that a multilayered system with an atomically controlled thickness can be utilized to control the electrical resistance, metastable phase formation, and the valence band structure in an Sb-Se alloy system.",
author = "Baeck, {Ju Heyuck} and Kim, {Tae Hyeon} and Choi, {Hye Jin} and Jeong, {Kwang Ho} and Cho, {Mann Ho}",
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Phase transformation through metastable structures in atomically controlled Se/Sb Multilayers. / Baeck, Ju Heyuck; Kim, Tae Hyeon; Choi, Hye Jin; Jeong, Kwang Ho; Cho, Mann Ho.

In: Journal of Physical Chemistry C, Vol. 115, No. 27, 14.07.2011, p. 13462-13470.

Research output: Contribution to journalArticle

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T1 - Phase transformation through metastable structures in atomically controlled Se/Sb Multilayers

AU - Baeck, Ju Heyuck

AU - Kim, Tae Hyeon

AU - Choi, Hye Jin

AU - Jeong, Kwang Ho

AU - Cho, Mann Ho

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AB - Multilayer films composed of individual layers of [Sb(8.84 Å)/Se(12.6 Å)](Sb4Se6), [Sb(8.84 Å)/Se(7.2 Å)]- (Sb4Se4), and [Sb(15.4 Å)/Se(7.2 Å)](Sb6Se4) were synthesized using effusion cells controlled at the subatomic scale. After an annealing process, the Sb4Se6 multilayered film with an Sb2Se3 orthorhombic structure had a high resistance and a clean valence band edge similar to that for a band shape of a semiconductor, whereas the Sb6Se4 film with an Sb rhombohedral structure and an Sb2Se3 orthorhombic structure had a low resistance and a band tail that originated from their metallic characteristics in the near Fermi level. In the case of Sb4Se4, a metastable Sb 4Se4 monoclinic structure was induced at an annealing temperature of 200 °C because of the unstable, local, and anisotropic distribution of each element in the vertical direction of multilayer films with a specific stoichiometry. Moreover, the nonbonding states originating from a band-gap state were generated in the film with a metastable structure. When the annealing process was conducted at 256 °C, the linear diffusion of elements in the film induced the most stable crystal structure with a stable stoichiometry. That is, the multilayered Sb4Se4 film underwent a steplike resistance change through a two-level phase change process. The findings indicate that a multilayered system with an atomically controlled thickness can be utilized to control the electrical resistance, metastable phase formation, and the valence band structure in an Sb-Se alloy system.

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