Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

Seung Yun Lee; Hyung Keun Kim; Jin Hyock Kim; Jae Sung Roh; Doo Jin Choi

doi:10.1007/s10853-009-3650-1

Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

Seung Yun Lee, Hyung Keun Kim, Jin Hyock Kim, Jae Sung Roh, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We have investigated the nitrogen doping effect on phase transition characteristics and electrical property of nitrogen-doped GeSb (N-doped GS) thin films. The nitrogen gas flow rate changed from 0 sccm (GS(0)) to 6 sccm (GS(6)) during the deposition. The sheet resistance of crystalline state was increased from 2.6 to 5.1 kω/and thermal stability of amorphous was increased as nitrogen gas flow rate increased due to nitrogen doping effect. Moreover, the average grain size was decreased from 9.7 to 6.6 nm at 400 °C as nitrogen gas flow rate increased. However, the crystallization threshold time and laser power of GS(6) were shorter and lower than GS(0) caused by lower optical reflectivity. Nitrogen-doped GeSb showed the possibility of low RESET power and high speed PRAM operation.

Original language	English
Pages (from-to)	4354-4359
Number of pages	6
Journal	Journal of Materials Science
Volume	44
Issue number	16
DOIs	https://doi.org/10.1007/s10853-009-3650-1
Publication status	Published - 2009 Aug

Bibliographical note

Funding Information:
Acknowledgements This work was supported by the Second Stage of Brain, Korea 21 project in 2007 and Hynix Semiconductor Inc. of Korea.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications",

abstract = "We have investigated the nitrogen doping effect on phase transition characteristics and electrical property of nitrogen-doped GeSb (N-doped GS) thin films. The nitrogen gas flow rate changed from 0 sccm (GS(0)) to 6 sccm (GS(6)) during the deposition. The sheet resistance of crystalline state was increased from 2.6 to 5.1 kω/and thermal stability of amorphous was increased as nitrogen gas flow rate increased due to nitrogen doping effect. Moreover, the average grain size was decreased from 9.7 to 6.6 nm at 400 °C as nitrogen gas flow rate increased. However, the crystallization threshold time and laser power of GS(6) were shorter and lower than GS(0) caused by lower optical reflectivity. Nitrogen-doped GeSb showed the possibility of low RESET power and high speed PRAM operation.",

author = "Lee, {Seung Yun} and Kim, {Hyung Keun} and Kim, {Jin Hyock} and Roh, {Jae Sung} and Choi, {Doo Jin}",

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AU - Lee, Seung Yun

AU - Kim, Hyung Keun

AU - Kim, Jin Hyock

AU - Roh, Jae Sung

AU - Choi, Doo Jin

N1 - Funding Information: Acknowledgements This work was supported by the Second Stage of Brain, Korea 21 project in 2007 and Hynix Semiconductor Inc. of Korea.

PY - 2009/8

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N2 - We have investigated the nitrogen doping effect on phase transition characteristics and electrical property of nitrogen-doped GeSb (N-doped GS) thin films. The nitrogen gas flow rate changed from 0 sccm (GS(0)) to 6 sccm (GS(6)) during the deposition. The sheet resistance of crystalline state was increased from 2.6 to 5.1 kω/and thermal stability of amorphous was increased as nitrogen gas flow rate increased due to nitrogen doping effect. Moreover, the average grain size was decreased from 9.7 to 6.6 nm at 400 °C as nitrogen gas flow rate increased. However, the crystallization threshold time and laser power of GS(6) were shorter and lower than GS(0) caused by lower optical reflectivity. Nitrogen-doped GeSb showed the possibility of low RESET power and high speed PRAM operation.

AB - We have investigated the nitrogen doping effect on phase transition characteristics and electrical property of nitrogen-doped GeSb (N-doped GS) thin films. The nitrogen gas flow rate changed from 0 sccm (GS(0)) to 6 sccm (GS(6)) during the deposition. The sheet resistance of crystalline state was increased from 2.6 to 5.1 kω/and thermal stability of amorphous was increased as nitrogen gas flow rate increased due to nitrogen doping effect. Moreover, the average grain size was decreased from 9.7 to 6.6 nm at 400 °C as nitrogen gas flow rate increased. However, the crystallization threshold time and laser power of GS(6) were shorter and lower than GS(0) caused by lower optical reflectivity. Nitrogen-doped GeSb showed the possibility of low RESET power and high speed PRAM operation.

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Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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