Phonon-assisted carrier transport through a lattice-mismatched interface

Hyong Seo Yoon; Juyeong Oh; Jae Young Park; Jeong Seob Kang; Junyoung Kwon; Teresa Cusati; Gianluca Fiori; Giuseppe Iannaccone; Alessandro Fortunelli; V. Ongun Ozcelik; Gwan Hyoung Lee; Tony Low; Seong Chan Jun

doi:10.1038/s41427-019-0113-2

Phonon-assisted carrier transport through a lattice-mismatched interface

Hyong Seo Yoon, Juyeong Oh, Jae Young Park, Jeong Seob Kang, Junyoung Kwon, Teresa Cusati, Gianluca Fiori, Giuseppe Iannaccone, Alessandro Fortunelli, V. Ongun Ozcelik, Gwan Hyoung Lee, Tony Low, Seong Chan Jun

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

MoS₂ typically exhibits unconventional layer-thickness-dependent electronic properties. It also exhibits layer-dependent band structures including indirect-to-direct band transitions, owing to which the electronic and carrier transport properties of a lattice-mismatched, conducting, two-dimensional junction are distinct with the naturally stepwise junction behaving as a 1D junction. We found distinguishable effects at the interface of vertically stacked MoS₂. The results revealed that misorientationally stacked layers exhibited significantly low junction resistance and independent energy bandgaps without bending owing to their effectively decoupled behavior. Further, phonon-assisted carriers dominantly affected the lattice-mismatched interface owing to its low junction resistance, as determined via low-temperature measurement. Our results could facilitate the realization of high-performance MoS₂ transistors with small contact resistances caused by lattice mismatching.

Original language	English
Article number	14
Journal	NPG Asia Materials
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41427-019-0113-2
Publication status	Published - 2019 Dec 1

Bibliographical note

Funding Information:
This research was partially supported by the Nanomaterial Technology Development Program (NRF-2017M3A7B4041987), Korean Government (MSIP) (No. 2015R1A5A1037668), and the National Research Foundation of Korea Grant funded by the Korean Government (Grant No.2017R1A5A1014862, SRC program: vdWMRC center).

Publisher Copyright:
© 2019, The Author(s).

All Science Journal Classification (ASJC) codes

Modelling and Simulation
Materials Science(all)
Condensed Matter Physics

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title = "Phonon-assisted carrier transport through a lattice-mismatched interface",

abstract = "MoS2 typically exhibits unconventional layer-thickness-dependent electronic properties. It also exhibits layer-dependent band structures including indirect-to-direct band transitions, owing to which the electronic and carrier transport properties of a lattice-mismatched, conducting, two-dimensional junction are distinct with the naturally stepwise junction behaving as a 1D junction. We found distinguishable effects at the interface of vertically stacked MoS2. The results revealed that misorientationally stacked layers exhibited significantly low junction resistance and independent energy bandgaps without bending owing to their effectively decoupled behavior. Further, phonon-assisted carriers dominantly affected the lattice-mismatched interface owing to its low junction resistance, as determined via low-temperature measurement. Our results could facilitate the realization of high-performance MoS2 transistors with small contact resistances caused by lattice mismatching.",

author = "Yoon, {Hyong Seo} and Juyeong Oh and Park, {Jae Young} and Kang, {Jeong Seob} and Junyoung Kwon and Teresa Cusati and Gianluca Fiori and Giuseppe Iannaccone and Alessandro Fortunelli and Ozcelik, {V. Ongun} and Lee, {Gwan Hyoung} and Tony Low and Jun, {Seong Chan}",

note = "Funding Information: This research was partially supported by the Nanomaterial Technology Development Program (NRF-2017M3A7B4041987), Korean Government (MSIP) (No. 2015R1A5A1037668), and the National Research Foundation of Korea Grant funded by the Korean Government (Grant No.2017R1A5A1014862, SRC program: vdWMRC center). Publisher Copyright: {\textcopyright} 2019, The Author(s).",

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doi = "10.1038/s41427-019-0113-2",

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AU - Yoon, Hyong Seo

AU - Oh, Juyeong

AU - Park, Jae Young

AU - Kang, Jeong Seob

AU - Kwon, Junyoung

AU - Cusati, Teresa

AU - Fiori, Gianluca

AU - Iannaccone, Giuseppe

AU - Fortunelli, Alessandro

AU - Ozcelik, V. Ongun

AU - Lee, Gwan Hyoung

AU - Low, Tony

AU - Jun, Seong Chan

N1 - Funding Information: This research was partially supported by the Nanomaterial Technology Development Program (NRF-2017M3A7B4041987), Korean Government (MSIP) (No. 2015R1A5A1037668), and the National Research Foundation of Korea Grant funded by the Korean Government (Grant No.2017R1A5A1014862, SRC program: vdWMRC center). Publisher Copyright: © 2019, The Author(s).

PY - 2019/12/1

Y1 - 2019/12/1

N2 - MoS2 typically exhibits unconventional layer-thickness-dependent electronic properties. It also exhibits layer-dependent band structures including indirect-to-direct band transitions, owing to which the electronic and carrier transport properties of a lattice-mismatched, conducting, two-dimensional junction are distinct with the naturally stepwise junction behaving as a 1D junction. We found distinguishable effects at the interface of vertically stacked MoS2. The results revealed that misorientationally stacked layers exhibited significantly low junction resistance and independent energy bandgaps without bending owing to their effectively decoupled behavior. Further, phonon-assisted carriers dominantly affected the lattice-mismatched interface owing to its low junction resistance, as determined via low-temperature measurement. Our results could facilitate the realization of high-performance MoS2 transistors with small contact resistances caused by lattice mismatching.

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Phonon-assisted carrier transport through a lattice-mismatched interface

Abstract

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