Phosphorus Doping of Si Nanosheets by Spin-on Dopant Proximity

Jeen Moon Yang, Jaejun Lee, Tae Eon Park, Dongjea Seo, Jeong Min Park, Sangwon Park, Jukwan Na, Juyoung Kwon, Hyo Jung Lee, Jaehyun Ryu, Heon Jin Choi

Research output: Contribution to journalArticle

Abstract

Abstract: Low-dimensional silicon (Si) nanostructures have been attracting a significant attention for various applications including electrical, optical, energy devices, and bio-chemical sensors. Two-dimensional Si nanostructures, i.e., Si nanosheets (SiNSs), are promising owing to their extremely large surface area, mechanical flexibility, and band gap modulation. In order to exploit the potentials of SiNSs, the doping of these nanostructures is crucial; however, this has not been yet extensively investigated. In this paper, we report an n-type phosphorus doping of SiNSs using a spin-on dopant proximity technique that was employed to deposit a thin film of phosphosilicate glass by evaporation. Structural and X-ray measurements results reveal that the phosphorus atoms are substitutionally doped and that the crystallinity and structure of the SiNSs are preserved after the doping. Electrical measurements show that the SiNSs are heavily n-type doped. The doping level can be modulated by adjusting the annealing temperature.

Original languageEnglish
Pages (from-to)208-215
Number of pages8
JournalElectronic Materials Letters
Volume15
Issue number2
DOIs
Publication statusPublished - 2019 Mar 8

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Nanosheets
Silicon
Phosphorus
Doping (additives)
Nanostructures
Chemical sensors
Evaporation
Energy gap
Deposits
Modulation
Annealing
X rays
Glass
Thin films
Atoms
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Yang, Jeen Moon ; Lee, Jaejun ; Park, Tae Eon ; Seo, Dongjea ; Park, Jeong Min ; Park, Sangwon ; Na, Jukwan ; Kwon, Juyoung ; Lee, Hyo Jung ; Ryu, Jaehyun ; Choi, Heon Jin. / Phosphorus Doping of Si Nanosheets by Spin-on Dopant Proximity. In: Electronic Materials Letters. 2019 ; Vol. 15, No. 2. pp. 208-215.
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abstract = "Abstract: Low-dimensional silicon (Si) nanostructures have been attracting a significant attention for various applications including electrical, optical, energy devices, and bio-chemical sensors. Two-dimensional Si nanostructures, i.e., Si nanosheets (SiNSs), are promising owing to their extremely large surface area, mechanical flexibility, and band gap modulation. In order to exploit the potentials of SiNSs, the doping of these nanostructures is crucial; however, this has not been yet extensively investigated. In this paper, we report an n-type phosphorus doping of SiNSs using a spin-on dopant proximity technique that was employed to deposit a thin film of phosphosilicate glass by evaporation. Structural and X-ray measurements results reveal that the phosphorus atoms are substitutionally doped and that the crystallinity and structure of the SiNSs are preserved after the doping. Electrical measurements show that the SiNSs are heavily n-type doped. The doping level can be modulated by adjusting the annealing temperature.",
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Yang, JM, Lee, J, Park, TE, Seo, D, Park, JM, Park, S, Na, J, Kwon, J, Lee, HJ, Ryu, J & Choi, HJ 2019, 'Phosphorus Doping of Si Nanosheets by Spin-on Dopant Proximity', Electronic Materials Letters, vol. 15, no. 2, pp. 208-215. https://doi.org/10.1007/s13391-018-00100-z

Phosphorus Doping of Si Nanosheets by Spin-on Dopant Proximity. / Yang, Jeen Moon; Lee, Jaejun; Park, Tae Eon; Seo, Dongjea; Park, Jeong Min; Park, Sangwon; Na, Jukwan; Kwon, Juyoung; Lee, Hyo Jung; Ryu, Jaehyun; Choi, Heon Jin.

In: Electronic Materials Letters, Vol. 15, No. 2, 08.03.2019, p. 208-215.

Research output: Contribution to journalArticle

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AU - Yang, Jeen Moon

AU - Lee, Jaejun

AU - Park, Tae Eon

AU - Seo, Dongjea

AU - Park, Jeong Min

AU - Park, Sangwon

AU - Na, Jukwan

AU - Kwon, Juyoung

AU - Lee, Hyo Jung

AU - Ryu, Jaehyun

AU - Choi, Heon Jin

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N2 - Abstract: Low-dimensional silicon (Si) nanostructures have been attracting a significant attention for various applications including electrical, optical, energy devices, and bio-chemical sensors. Two-dimensional Si nanostructures, i.e., Si nanosheets (SiNSs), are promising owing to their extremely large surface area, mechanical flexibility, and band gap modulation. In order to exploit the potentials of SiNSs, the doping of these nanostructures is crucial; however, this has not been yet extensively investigated. In this paper, we report an n-type phosphorus doping of SiNSs using a spin-on dopant proximity technique that was employed to deposit a thin film of phosphosilicate glass by evaporation. Structural and X-ray measurements results reveal that the phosphorus atoms are substitutionally doped and that the crystallinity and structure of the SiNSs are preserved after the doping. Electrical measurements show that the SiNSs are heavily n-type doped. The doping level can be modulated by adjusting the annealing temperature.

AB - Abstract: Low-dimensional silicon (Si) nanostructures have been attracting a significant attention for various applications including electrical, optical, energy devices, and bio-chemical sensors. Two-dimensional Si nanostructures, i.e., Si nanosheets (SiNSs), are promising owing to their extremely large surface area, mechanical flexibility, and band gap modulation. In order to exploit the potentials of SiNSs, the doping of these nanostructures is crucial; however, this has not been yet extensively investigated. In this paper, we report an n-type phosphorus doping of SiNSs using a spin-on dopant proximity technique that was employed to deposit a thin film of phosphosilicate glass by evaporation. Structural and X-ray measurements results reveal that the phosphorus atoms are substitutionally doped and that the crystallinity and structure of the SiNSs are preserved after the doping. Electrical measurements show that the SiNSs are heavily n-type doped. The doping level can be modulated by adjusting the annealing temperature.

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